Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.40 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | PKM | P14618 | 1/20 | 0.40 |
| ▸ | XBP1 | P17861 | 1/20 | 0.40 |
| ▸ | MPI | P34949 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.38 |
| ▸ | GAA | P10253 | 3/20 | 0.38 |
| ▸ | MEN1 | O00255 | 3/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2050096 | 0.86 | MAPT (0.44) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL2050095 | 0.86 | MAPT (0.44) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL11528365 | 0.85 | ALDH1A1 (0.47) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL26325186 | 0.82 | KMT2A (0.46) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL195187 | 0.81 | ALDH1A1 (0.44) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL195188 | 0.81 | ALDH1A1 (0.44) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL30089102 | 0.81 | ALDH1A1 (0.44) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL91998 | 0.79 | ALDH1A1 (0.47) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL22980394 | 0.78 | F2 (0.45) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 | |
| SCHEMBL22980392 | 0.78 | F2 (0.45) | ALDH1A1SMN1; SMN2LMNAMAPK1HSP90AA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230176479-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-08 | — | — | US | disclosed |
| EP-4167028-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-19 | — | — | EP | disclosed |
| US-11460774-B2 | Photosensitive resin composition, photosensitive dry film, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-04 | — | — | US | disclosed |
| EP-3163374-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-02 | — | — | EP | disclosed |
| US-10815572-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-27 | — | — | US | disclosed |
| EP-2955576-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-07-22 | — | — | EP | disclosed |
| US-20200201182-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-25 | — | — | US | disclosed |
| EP-3671345-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-06-24 | — | — | EP | disclosed |
| US-10007181-B2 | Chemically amplified positive resist dry film, dry film laminate and method of preparing laminate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| EP-3128368-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2018-01-24 | — | — | EP | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| EP-2101217-A1 | Sulfonium salt-containing polymer, resist compositon, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-09-16 | — | — | EP | disclosed |
| EP-2100887-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-09-16 | — | — | EP | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | ALDH1A1 4502/4885SMN1; SMN2 2164/4885LMNA 1522/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ALDH1A1 3081/4885SMN1; SMN2 1917/4885LMNA 3551/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ALDH1A1 2781/4885SMN1; SMN2 1655/4885LMNA 3638/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.