Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.34 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.34 |
| ▸ | HBB | P68871 | 1/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 10/20 | 0.33 |
| ▸ | SLC6A2 | P23975 | 9/20 | 0.33 |
| ▸ | SLC6A4 | P31645 | 9/20 | 0.33 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.33 |
| ▸ | SLC6A3 | Q01959 | 5/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9610378 | 0.99 | MAPT (0.38) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610350 | 0.97 | LMNA (0.34) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610365 | 0.95 | SLC6A2 (0.34) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610369 | 0.88 | KMT2A (0.36) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610376 | 0.88 | LMNA (0.36) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610381 | 0.88 | ALDH1A1 (0.36) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610372 | 0.87 | KMT2A (0.37) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610393 | 0.87 | ALDH1A1 (0.36) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610383 | 0.87 | ALDH1A1 (0.36) | LMNASMN1; SMN2MAPTALDH1A1KMT2A | |
| SCHEMBL9610368 | 0.87 | KMT2A (0.37) | LMNASMN1; SMN2MAPTALDH1A1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 110 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20110171580-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-20110171580-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | PSMB2, PSMC6, PSMB1 | LMNA 2467/4885SMN1; SMN2 3186/4885MAPT 958/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.