SCHEMBL9610378

SCHEMBL9610378

C=C(C)C(=O)OC1c2ccccc2CC12CCCCC2

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.38
ALDH1A1 P00352 2/20 0.38
KMT2A Q03164 2/20 0.38
TSHR P16473 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
LMNA P02545 1/20 0.36
CHRNA7 P36544 1/20 0.35
ALOX15 P16050 1/20 0.33
HBB P68871 1/20 0.33
CYP2D6 P10635 9/20 0.33
SLC6A2 P23975 8/20 0.33
SLC6A4 P31645 8/20 0.33
GAA P10253 1/20 0.33
SLC6A3 Q01959 4/20 0.32
POLB P06746 2/20 0.32
MEN1 O00255 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9610352 0.99 LMNA (0.36) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610350 0.96 LMNA (0.34) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610365 0.93 SLC6A2 (0.34) MAPTALDH1A1KMT2ASMN1; SMN2LMNA
SCHEMBL9610368 0.89 KMT2A (0.37) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610372 0.89 KMT2A (0.37) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610369 0.87 KMT2A (0.36) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610381 0.87 ALDH1A1 (0.36) MAPTALDH1A1KMT2ASMN1; SMN2LMNA
SCHEMBL9610376 0.87 LMNA (0.36) MAPTALDH1A1KMT2ATSHRSMN1; SMN2
SCHEMBL9610393 0.86 ALDH1A1 (0.36) MAPTALDH1A1KMT2ASMN1; SMN2LMNA
SCHEMBL9610383 0.86 ALDH1A1 (0.36) MAPTALDH1A1KMT2ASMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-11 US disclosed
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-11 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS PSMB2, PSMC6, PSMB1 MAPT 958/4885ALDH1A1 3732/4885KMT2A 700/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.