SCHEMBL9623486

SCHEMBL9623486

Cc1c(O)ccc2c(C)c(O)ccc12

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR2 Q92731 9/20 0.50
ESR1 P03372 8/20 0.50
TRPA1 O75762 2/20 0.46
ATM Q13315 1/20 0.46
MAOB P27338 1/20 0.43
KDM4E B2RXH2 3/20 0.42
ALDH1A1 P00352 2/20 0.42
GAA P10253 2/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
IDO1 P14902 1/20 0.40
THRA P10827 1/20 0.40
THRB P10828 1/20 0.40
OPRK1 P41145 1/20 0.39
KMT2A Q03164 1/20 0.39
TP53 P04637 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
MAPK1 P28482 2/20 0.39
LMNA P02545 1/20 0.39
HTT P42858 1/20 0.39
GLA P06280 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29771854 1.00 ESR2 (0.50) ESR2ESR1TRPA1ATMMAOB
SCHEMBL4188624 0.84 IDO1 (0.55) ESR2ESR1TRPA1ATMKDM4E
SCHEMBL3961404 0.83 CYP1A2 (0.59) ESR2ESR1TRPA1ATMMAOB
SCHEMBL68013 0.82 TRPA1 (0.53) ESR2ESR1TRPA1ATMKDM4E
SCHEMBL29457565 0.82 TRPA1 (0.53) ESR2ESR1TRPA1ATMKDM4E
SCHEMBL28713460 0.81 ESR2 (0.57) ESR2ESR1MAOBKDM4EALDH1A1
SCHEMBL14641012 0.79 LDHA (0.49) ESR2ESR1MAOBKDM4EALDH1A1
SCHEMBL11140356 0.79 TRPA1 (0.41) ESR2ESR1TRPA1ATMKDM4E
SCHEMBL18318914 0.79 CYP2A6 (0.41) ESR2ESR1MAOBKDM4EALDH1A1
SCHEMBL19012038 0.77 ESR2 (0.47) ESR2ESR1TRPA1ATMMAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109960111-B Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and method for forming pattern 信越化学工业株式会社 2022-07-12 CN disclosed
US-20220011672-A1 COMPOSITION, RESIST UNDERLAYER FILM, METHOD OF FORMING RESIST UNDERLAYER FILM, METHOD OF PRODUCING PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2022-01-13 US disclosed
US-11018015-B2 Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-25 US disclosed
US-10799496-B2 Naphthylenyl compounds for long-acting injectable compositions and related methods ALKERMES PHARMA IRELAND LIMITED (IE) 2020-10-13 US disclosed
US-10799496-B2 Naphthylenyl compounds for long-acting injectable compositions and related methods ALKERMES PHARMA IRELAND LIMITED (IE) 2020-10-13 US disclosed
EP-3508918-B1 COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-07-15 EP disclosed
WO-2020012248-A1 NOVEL NAPHTHYLENYL COMPOUNDS FOR LONG-ACTING INJECTABLE COMPOSITIONS AND RELATED METHODS ALKERMES PHARMA IRELAND LIMITED (IE) 2020-01-16 WO disclosed
WO-2020012248-A1 NOVEL NAPHTHYLENYL COMPOUNDS FOR LONG-ACTING INJECTABLE COMPOSITIONS AND RELATED METHODS ALKERMES PHARMA IRELAND LIMITED (IE) 2020-01-16 WO disclosed
EP-3508918-A1 COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2019-07-10 EP disclosed
CN-109960111-A Organic film forms the forming method and pattern forming method with composition, semiconductor device producing substrate, organic film 信越化学工业株式会社 2019-07-02 CN disclosed
US-20190198341-A1 COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 US disclosed
EP-0212944-B1 MELT-PROCESSABLE AROMATIC COPOLYESTER Kabushiki Kaisha Ueno Seiyaku Oyo Kenkyujo (JP) 1992-04-08 EP disclosed
EP-0298692-A2 Melt processable polyester capable of forming an anisotropic melt comprising a relatively low concentration of 6-oxy-2-naphthoyi moiety, 4-oxy-benzoyl moiety, 2,6-dioxynaphthalene moiety, and terephthaloyl moiety HOECHST CELANESE CORPORATION (US) 1989-01-11 EP disclosed
US-4746721-A ENGINEERING PLASTICS KABUSHIKI KAISHA UENO SEIYAKU OYO KENKYUJO (JP) 1988-05-24 US disclosed
US-4746694-A Melt processable polyester capable of forming an anisotropic melt comprising a relatively low concentration of 6-oxy-2-naphthoyl moiety, 4-oxybenzoyl moiety, 2,6-dioxynaphthalene moiety, and terephthaloyl moiety HOECHST CELANESE CORPORATION (US) 1988-05-24 US disclosed
EP-0212944-A2 Melt-processable aromatic copolyester Kabushiki Kaisha Ueno Seiyaku Oyo Kenkyujo (JP) 1987-03-04 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10799496-B2 Naphthylenyl compounds for long-acting injectable compositions and related methods OPRL1, OPRK1, OPRM1 ESR2 1365/4885ESR1 1538/4885TRPA1 4053/4885
US-20220011672-A1 COMPOSITION, RESIST UNDERLAYER FILM, METHOD OF FORMING RESIST UNDERLAYER FILM, METHOD OF PRODUCING PATTERNED SUBSTRATE, AND COMPOUND TOP1, RER1, ABCC1 ESR2 1671/4885ESR1 1655/4885TRPA1 4120/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.