SCHEMBL973203

SCHEMBL973203

CC(C)(C)C(=O)OC(C(F)(F)F)C(F)(F)S(=O)(=O)O.CCN(CC)CC

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL383996 0.89 PRKCA (0.34) PRKCA
Trimethylammonium SCHEMBL4035752 0.87 PRKCA (0.32) PRKCA
SCHEMBL972923 0.87 PRKCA (0.33) PRKCA
Tetrabuthylammonium SCHEMBL975848 0.80 SLC22A1 (0.32)
SCHEMBL15216311 0.80 OPRK1 (0.33)
SCHEMBL12157371 0.80
SCHEMBL92306 0.80
SCHEMBL2284166 0.79 TSHR (0.30)
SCHEMBL20691732 0.77
SCHEMBL12157372 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10234757-B2 Polymer, making method, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-19 US disclosed
EP-2664633-B1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
US-20180046081-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING PROCESS, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2018-02-15 US disclosed
US-9146464-B2 Sulfonium salt, polymer, polymer making method, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-29 US disclosed
US-9046769-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-8957160-B2 Preparation of polymer, resulting polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-20140371466-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2014-12-18 US disclosed
US-8859191-B2 Pattern-forming method, and composition for forming resist underlayer film JSR CORPORATION (JP) 2014-10-14 US disclosed
US-20140162189-A1 SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
EP-2664633-A1 Polymer, making method, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-11-20 EP disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
EP-2631253-A2 Preparation of polymer, resulting polymer, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-28 EP disclosed
US-20120285929-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2012-11-15 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-7871761-B2 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-18 US disclosed
US-20080032231-A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. 2008-02-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120285929-A1 PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM ADAM9, MUS81, ADAM17 PRKCA 2793/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X PRKCA 3696/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.