Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 5/20 | 0.43 |
| ▸ | ATM | Q13315 | 1/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.38 |
| ▸ | HTT | P42858 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 2/20 | 0.35 |
| ▸ | NPC1 | O15118 | 2/20 | 0.35 |
| ▸ | RAB9A | P51151 | 2/20 | 0.35 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.34 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.34 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.34 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13209938 | 0.86 | SMN1; SMN2 (0.40) | SMN1; SMN2ATML3MBTL1HSD17B10HTT | |
| SCHEMBL13209948 | 0.85 | L3MBTL1 (0.55) | SMN1; SMN2ATML3MBTL1MAPTKDM4E | |
| SCHEMBL13209941 | 0.84 | SMN1; SMN2 (0.39) | SMN1; SMN2ATML3MBTL1HSD17B10HTT | |
| SCHEMBL98573 | 0.84 | SMN1; SMN2 (0.45) | SMN1; SMN2ATML3MBTL1HSD17B10HTT | |
| SCHEMBL13209942 | 0.82 | SMN1; SMN2 (0.45) | SMN1; SMN2L3MBTL1MAPTKDM4EALDH1A1 | |
| SCHEMBL13209940 | 0.81 | ATM (0.40) | SMN1; SMN2ATML3MBTL1HSD17B10KDM4E | |
| SCHEMBL13209947 | 0.81 | ALDH1A1 (0.45) | SMN1; SMN2ATMHSD17B10HTTMAPT | |
| SCHEMBL13209954 | 0.80 | SMN1; SMN2 (0.41) | SMN1; SMN2ATML3MBTL1HSD17B10HTT | |
| SCHEMBL25629459 | 0.80 | ATM (0.46) | SMN1; SMN2ATML3MBTL1HSD17B10HTT | |
| SCHEMBL13399660 | 0.78 | CASP3 (0.45) | SMN1; SMN2HSD17B10MAPTKDM4ETP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 180 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-20230314945-A1 | NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-8415082-B2 | Resist composition, method of forming resist pattern, compound and method of producing the same, acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-09 | — | — | US | disclosed |
| US-20130045443-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| US-8367297-B2 | Resist composition, method of forming resist pattern, novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-05 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120148955-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148956-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120058430-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100196820-A1 | Resist composition, method of forming resist pattern, novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | RER1, GLRA1, GRIN1 | SMN1; SMN2 1280/4885ATM 2974/4885L3MBTL1 4063/4885 |
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | SMN1; SMN2 3157/4885ATM 4557/4885L3MBTL1 3249/4885 |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, SCO2 | SMN1; SMN2 1237/4885ATM 3221/4885L3MBTL1 4201/4885 |
| US-20120058430-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | ASIC1, SLC11A2, RER1 | SMN1; SMN2 1551/4885ATM 2857/4885L3MBTL1 3777/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | SMN1; SMN2 724/4885ATM 3523/4885L3MBTL1 2206/4885 |
| US-20120148955-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND | C1R, SLC11A2, RER1 | SMN1; SMN2 1554/4885ATM 3163/4885L3MBTL1 4274/4885 |
| US-20100196820-A1 | Resist composition, method of forming resist pattern, novel compound and acid generator | ASIC1, RER1, SLC11A2 | SMN1; SMN2 2273/4885ATM 3027/4885L3MBTL1 4265/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.