Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 3/20 | 0.46 |
| ▸ | HTT | P42858 | 3/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.44 |
| ▸ | APEX1 | P27695 | 1/20 | 0.44 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 6/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
| ▸ | ESR1 | P03372 | 1/20 | 0.36 |
| ▸ | THRB | P10828 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.35 |
| ▸ | ATM | Q13315 | 1/20 | 0.35 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8006417 | 0.89 | ELANE (0.49) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL12376681 | 0.86 | ELANE (0.48) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL21228923 | 0.86 | ELANE (0.48) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL17627812 | 0.83 | EGFR (0.46) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL795295 | 0.82 | POLB (0.57) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL22142657 | 0.82 | KMT2A (0.49) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL92378 | 0.81 | ELANE (0.66) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL16351988 | 0.81 | ELANE (0.47) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL29316059 | 0.79 | TDP1 (0.47) | ELANEHTTPOLBAPEX1TDP1 | |
| SCHEMBL29316013 | 0.79 | HTT (0.50) | ELANEHTTPOLBAPEX1TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10509314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-12-17 | — | — | US | disclosed |
| US-10457761-B2 | Polymer, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-29 | — | — | US | disclosed |
| US-10222696-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-05 | — | — | US | disclosed |
| US-10191373-B2 | Method for producing polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| US-10012902-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10012902-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-9958777-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958777-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-8911929-B2 | Developer and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-16 | — | — | US | disclosed |
| US-20140315131-A1 | DEVELOPER AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-23 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140141377-A1 | DEVELOPER AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-05-22 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080064-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| US-7629106-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7459261-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-02 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10509314-B2 | Resist composition and patterning process | SRMS, SLC11A2, PCNA | ELANE 3840/4885HTT 891/4885POLB 190/4885 |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ALAD, APEX1, HMBS | ELANE 1181/4885HTT 1874/4885POLB 250/4885 |
| US-10012902-B2 | Positive resist composition and pattern forming process | EWSR1, SRPRA, SRPRB | ELANE 2338/4885HTT 2638/4885POLB 182/4885 |
| US-10222696-B2 | Resist composition and patterning process | SLC11A2, GRN, PGF | ELANE 4217/4885HTT 756/4885POLB 234/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.