SCHEMBL9880667

SCHEMBL9880667

C=C(C)C(=O)OCCC(=O)Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 3/20 0.46
HTT P42858 3/20 0.44
POLB P06746 1/20 0.44
APEX1 P27695 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
KMT2A Q03164 6/20 0.43
ALDH1A1 P00352 3/20 0.40
HSD17B10 Q99714 2/20 0.40
LMNA P02545 2/20 0.40
MAPT P10636 2/20 0.40
MEN1 O00255 2/20 0.36
ESR1 P03372 1/20 0.36
THRB P10828 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.35
KDM4E B2RXH2 1/20 0.35
HSP90AA1 P07900 1/20 0.35
TSHR P16473 2/20 0.35
CYP19A1 P11511 1/20 0.35
ATM Q13315 1/20 0.35
PRSS1 P07477 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8006417 0.89 ELANE (0.49) ELANEHTTPOLBAPEX1TDP1
SCHEMBL12376681 0.86 ELANE (0.48) ELANEHTTPOLBAPEX1TDP1
SCHEMBL21228923 0.86 ELANE (0.48) ELANEHTTPOLBAPEX1TDP1
SCHEMBL17627812 0.83 EGFR (0.46) ELANEHTTPOLBAPEX1TDP1
SCHEMBL795295 0.82 POLB (0.57) ELANEHTTPOLBAPEX1TDP1
SCHEMBL22142657 0.82 KMT2A (0.49) ELANEHTTPOLBAPEX1TDP1
SCHEMBL92378 0.81 ELANE (0.66) ELANEHTTPOLBAPEX1TDP1
SCHEMBL16351988 0.81 ELANE (0.47) ELANEHTTPOLBAPEX1TDP1
SCHEMBL29316059 0.79 TDP1 (0.47) ELANEHTTPOLBAPEX1TDP1
SCHEMBL29316013 0.79 HTT (0.50) ELANEHTTPOLBAPEX1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10509314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-12-17 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10222696-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-05 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-10012902-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10012902-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-9958777-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-9958777-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-9958776-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-9958776-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-8911929-B2 Developer and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-16 US disclosed
US-20140315131-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-23 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140141377-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-22 US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20140080064-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20120129108-A1 BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-05-24 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10509314-B2 Resist composition and patterning process SRMS, SLC11A2, PCNA ELANE 3840/4885HTT 891/4885POLB 190/4885
US-20120129108-A1 BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ALAD, APEX1, HMBS ELANE 1181/4885HTT 1874/4885POLB 250/4885
US-10012902-B2 Positive resist composition and pattern forming process EWSR1, SRPRA, SRPRB ELANE 2338/4885HTT 2638/4885POLB 182/4885
US-10222696-B2 Resist composition and patterning process SLC11A2, GRN, PGF ELANE 4217/4885HTT 756/4885POLB 234/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.