SCHEMBL9908615

SCHEMBL9908615

CCC(C)c1cc(F)c(O)c(F)c1

nearest known ligand 0.48

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.44
ADRB1 P08588 1/20 0.44
ADRB3 P13945 1/20 0.44
ALDH1A1 P00352 2/20 0.44
USP2 O75604 1/20 0.44
GAA P10253 1/20 0.44
PKM P14618 1/20 0.44
HPGD P15428 1/20 0.44
ALOX15 P16050 1/20 0.44
HSD17B10 Q99714 1/20 0.44
HDAC4 P56524 1/20 0.42
HDAC2 Q92769 1/20 0.42
HDAC8 Q9BY41 1/20 0.42
SHBG P04278 1/20 0.42
TSHR P16473 2/20 0.38
CYP2C9 P11712 1/20 0.37
HKDC1 Q2TB90 1/20 0.36
RORC P51449 1/20 0.35
RPS6KA3 P51812 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25147626 1.00 ADRB2 (0.44) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL12872126 0.82 ALDH1A1 (0.38) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL1116090 0.82 USP2 (0.52) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL23682242 0.82 USP2 (0.52) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL22924942 0.81 ADRB2 (0.43) ADRB2ADRB1ADRB3HPGDSHBG
Methane SCHEMBL27627258 0.80 USP2 (0.50) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL17469351 0.80 ALDH1A1 (0.41) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL21154999 0.78 ALDH1A1 (0.36) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL24743652 0.78 ADRB2 (0.41) ADRB2ADRB1ADRB3SHBGRPS6KA3
SCHEMBL9908608 0.78 SHBG (0.64) ADRB2ALDH1A1USP2GAAPKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384674-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-30 US disclosed
US-20230236502-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-27 US disclosed
EP-3116851-B1 ANALOGS OF FEXARAMINE AND METHODS OF MAKING AND USING SALK INST FOR BIOLOGICAL STUDI (US) 2023-07-26 EP disclosed
US-20230221640-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-13 US disclosed
US-20230185192-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-15 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-20230133710-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-20230139891-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-20230139009-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound FUJIFILM CORPORATION (JP) 2018-07-03 US disclosed
US-9400430-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-07-26 US disclosed
US-9285679-B2 Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2016-03-15 US disclosed
US-20150086911-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-20150010855-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2015-01-08 US disclosed
US-20140242502-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-28 US disclosed
US-8778593-B2 Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2014-07-15 US disclosed
US-20130084518-A1 NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, AND, RESIST-COATED MASK BLANKS, METHOD FOR FORMING RESIST PATTERN, AND PHOTOMASK, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-04-04 US disclosed
US-20130029254-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-8198007-B2 Negative-working resist composition and pattern forming method using the same DAI NIPPON PRINTING CO., LTD. (JP) 2012-06-12 US disclosed
US-20100239980-A1 NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2010-09-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound RARA, RXRA, RARG ADRB2 3630/4885ADRB1 3184/4885ADRB3 3644/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.