Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 10/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | PRKCA | P17252 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9924178 | 1.00 | EPHX2 (0.43) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL19261005 | 1.00 | EPHX2 (0.43) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL15934957 | 0.99 | ALDH1A1 (0.43) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL15681506 | 0.95 | ALDH1A1 (0.43) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL9924179 | 0.89 | ALDH1A1 (0.46) | ALDH1A1NPSR1MEN1MAPTKMT2A | |
| SCHEMBL18700659 | 0.82 | EPHX2 (0.48) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL18924278 | 0.81 | ALDH1A1 (0.41) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL18924238 | 0.81 | ALDH1A1 (0.41) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL9925523 | 0.80 | EPHX1 (0.42) | EPHX2ALDH1A1NPSR1MEN1MAPT | |
| SCHEMBL9946445 | 0.80 | EPHX1 (0.42) | EPHX2ALDH1A1NPSR1MEN1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 162 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-20230314945-A1 | NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230288807-A1 | PHOTORESIST, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF EXTREME ULTRAVIOLET LITHOGRAPHY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-09-14 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120328982-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120308931-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120276481-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120264058-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120264052-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120214101-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120149916-A1 | NOVEL COMPOUND | CENTRAL GLASS CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148956-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120149916-A1 | NOVEL COMPOUND | MRPL11, ABCB7, MRPL21 | EPHX2 2967/4885ALDH1A1 1340/4885NPSR1 3069/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | EPHX2 3289/4885ALDH1A1 2173/4885NPSR1 3449/4885 |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | SCO2, ASIC1, NOX1 | EPHX2 754/4885ALDH1A1 1048/4885NPSR1 973/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.