SCHEMBL18924238

SCHEMBL18924238

O=C(OCCCCCCNSC(F)(F)F)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.43

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.41
NPSR1 Q6W5P4 2/20 0.41
MEN1 O00255 1/20 0.41
MAPT P10636 1/20 0.41
KMT2A Q03164 1/20 0.41
EPHX2 P34913 10/20 0.40
SMN1; SMN2 Q16637 1/20 0.37
PRKCA P17252 1/20 0.37
RECQL P46063 1/20 0.36
CYP17A1 P05093 1/20 0.36
CYP19A1 P11511 1/20 0.36
POLB P06746 1/20 0.35
GAA P10253 1/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18924278 1.00 ALDH1A1 (0.41) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL19961030 0.95 ALDH1A1 (0.43) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL18924230 0.89 ALDH1A1 (0.44) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL21135616 0.81 EPHX2 (0.31) NPSR1EPHX2
SCHEMBL9924176 0.81 EPHX2 (0.43) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL9924178 0.81 EPHX2 (0.43) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL19261005 0.81 EPHX2 (0.43) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL15934957 0.79 ALDH1A1 (0.43) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL9925523 0.79 EPHX1 (0.42) ALDH1A1NPSR1MEN1MAPTKMT2A
SCHEMBL19261615 0.79 EPHX1 (0.42) ALDH1A1NPSR1MEN1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-20190018319-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2019-01-17 US disclosed
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-02-08 US disclosed
US-20180024433-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-20180022916-A1 METHOD OF PREPARING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-9846364-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-19 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-20170176855-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-22 US disclosed
US-9682951-B2 Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-20 US disclosed
US-9678423-B2 Resist composition, method for forming resist pattern, acid generator and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-13 US disclosed
US-9671690-B2 Resist composition, method for forming resist pattern, photo-reactive quencher and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 ALDH1A1 3475/4885NPSR1 1311/4885MEN1 1046/4885
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 ALDH1A1 1921/4885NPSR1 1322/4885MEN1 1250/4885
US-20180037534-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, BRIX1, HAX1 ALDH1A1 1390/4885NPSR1 1099/4885MEN1 1359/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 ALDH1A1 2173/4885NPSR1 3449/4885MEN1 1142/4885
US-20170176855-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND RB1, FXR1, GAR1 ALDH1A1 900/4885NPSR1 3842/4885MEN1 587/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.