Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PRKCA | P17252 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17552811 | 0.89 | — | — | |
| SCHEMBL10062512 | 0.88 | — | — | |
| SCHEMBL11913019 | 0.87 | PRKCA (0.30) | PRKCA | |
| SCHEMBL440065 | 0.86 | — | — | |
| SCHEMBL18199035 | 0.85 | PRKCA (0.33) | PRKCA | |
| SCHEMBL97352 | 0.82 | — | — | |
| SCHEMBL19998162 | 0.81 | PRKCA (0.34) | PRKCA | |
| SCHEMBL15216372 | 0.81 | — | — | |
| SCHEMBL13820485 | 0.81 | — | — | |
| SCHEMBL18350227 | 0.80 | PRKCA (0.38) | PRKCA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20170269476-A1 | PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-09-21 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-9250529-B2 | Photoresist compositions and methods of use in high index immersion lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-02-02 | — | — | US | disclosed |
| US-20130224659-A1 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224657-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-8440387-B2 | Graded topcoat materials for immersion lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-05-14 | — | — | US | disclosed |
| US-20120288797-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF USE IN HIGH INDEX IMMERSION LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-11-15 | — | — | US | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20100168337-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-07-01 | — | — | US | disclosed |
| US-7678537-B2 | Graded topcoat materials for immersion lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-03-16 | — | — | US | disclosed |
| US-20080311506-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | ALLEN ROBERT D | 2008-12-18 | — | — | US | disclosed |
| US-20080311530-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-12-18 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, INSR | PRKCA 4269/4885 |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, MIF | PRKCA 4462/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.