Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 9/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 5/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 3/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 5/20 | 0.32 |
| ▸ | MAPT | P10636 | 4/20 | 0.32 |
| ▸ | LMNA | P02545 | 4/20 | 0.32 |
| ▸ | MAPK1 | P28482 | 3/20 | 0.32 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.32 |
| ▸ | NPC1 | O15118 | 2/20 | 0.32 |
| ▸ | RAB9A | P51151 | 2/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | TOP2A | P11388 | 1/20 | 0.32 |
| ▸ | TP53 | P04637 | 1/20 | 0.32 |
| ▸ | THPO | P40225 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | TUBB4A | P04350 | 1/20 | 0.32 |
| ▸ | TUBB | P07437 | 1/20 | 0.32 |
| ▸ | TUBA3C | P0DPH7 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13481214 | 0.86 | CYP3A4 (0.33) | CYP3A4CYP2C9CYP2D6CYP2C19MAPT | |
| SCHEMBL45970 | 0.82 | ALDH1A1 (0.31) | SMN1; SMN2ALDH1A1 | |
| SCHEMBL13481234 | 0.82 | — | — | |
| SCHEMBL13481231 | 0.82 | — | — | |
| SCHEMBL12156893 | 0.81 | LMNA (0.38) | CYP3A4CYP2D6LMNA | |
| SCHEMBL14397217 | 0.81 | — | — | |
| SCHEMBL4687089 | 0.80 | — | — | |
| SCHEMBL24996879 | 0.79 | — | — | |
| SCHEMBL5404648 | 0.79 | — | — | |
| SCHEMBL10195684 | 0.79 | PPP5C (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11586111-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-02-21 | — | — | US | disclosed |
| US-11061326-B2 | Chemical amplification type positive photosensitive resin composition, a photosensitive dry film, a method for producing a photosensitive dry film, a method for producing a patterned resist film, a method of manufacturing a template with a substrate, and a method of manufacturing a plated shaped product, and a Mercapto compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-07-13 | — | — | US | disclosed |
| US-20200174369-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2020-06-04 | — | — | US | disclosed |
| US-20190101825-A1 | CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, A PHOTOSENSITIVE DRY FILM, A METHOD FOR PRODUCING A PHOTOSENSITIVE DRY FILM, A METHOD FOR PRODUCING A PATTERNED RESIST FILM, A METHOD OF MANUFACTURING A TEMPLATE WITH A SUBSTRATE, AND A METHOD OF MANUFACTURING A PLATED SHAPED PRODUCT, AND A MERCAPTO COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2019-04-04 | — | — | US | disclosed |
| US-9829792-B2 | Monomer, polymer, positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170008982-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-12 | — | — | US | disclosed |
| US-9405197-B2 | Pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9134617-B2 | Solvent developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-15 | — | — | US | disclosed |
| US-20150160559-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-20150147702-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO LTD (JP) | 2015-05-28 | — | — | US | disclosed |
| US-20100233625-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100209848-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100167217-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100081088-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-20100062369-A1 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-7666571-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7666571-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-23 | — | — | US | disclosed |
| US-20100015552-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20070099114-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070099114-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100081088-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME | ASIC1, RER1, GRIN1 | CYP3A4 3282/4885CYP2C9 1630/4885CYP2D6 2238/4885 |
| US-20170008982-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, PARN, MMS19 | CYP3A4 4333/4885CYP2C9 4509/4885CYP2D6 4725/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.