SCHEMBL9945779

SCHEMBL9945779

CC(=C(F)F)S(=O)(=O)Oc1c(C(C)C)cc(C=O)cc1C(C)C

nearest known ligand 0.46

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
CYP2B6 P20813 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9945774 0.79
SCHEMBL107768 0.79 TYR (0.33) CYP1A2CYP3A4CYP2B6
SCHEMBL14479533 0.77 TYR (0.34) CYP1A2CYP3A4CYP2B6
SCHEMBL8169708 0.75 STS (0.44)
SCHEMBL12452838 0.75 ALDH1A3 (0.32)
SCHEMBL15355786 0.74 HSD11B1 (0.30)
SCHEMBL13882901 0.73 FABP3 (0.31) CYP1A2CYP3A4CYP2B6
SCHEMBL12304860 0.72 SRC (0.30)
SCHEMBL15471002 0.70
SCHEMBL178480 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8975002-B2 Positive resist composition for immersion exposure and pattern forming method FUJIFILM CORPORATION (JP) 2015-03-10 US disclosed
US-8932794-B2 Positive photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-01-13 US disclosed
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 US disclosed
US-8647812-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-02-11 US disclosed
US-8541159-B2 Positive resist composition for immersion exposure and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 US disclosed
US-20130011619-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120288691-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-15 US disclosed
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 US disclosed
US-20120148957-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-06-14 US disclosed
US-20110318687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110143280-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-06-16 US disclosed
US-20110136062-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-06-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM RAD51, RER1, RXRA ALDH1A1 2723/4885CYP1A2 3121/4885CYP3A4 4039/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.