SCHEMBL9945803

SCHEMBL9945803

CCC(C)(C)C(=O)OC(C)(C)C12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 3/20 0.36
DPP4 P27487 3/20 0.35
MDH1 P40925 1/20 0.33
MDH2 P40926 1/20 0.33
ALDH1A1 P00352 1/20 0.33
PKM P14618 1/20 0.33
CNR1 P21554 2/20 0.32
CNR2 P34972 2/20 0.32
NPSR1 Q6W5P4 1/20 0.31
ABL1 P00519 1/20 0.30
TSHR P16473 1/20 0.30
RIN1 Q13671 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14363831 0.88 HSD11B1 (0.36) HSD11B1DPP4MDH1MDH2ALDH1A1
SCHEMBL12918918 0.87
SCHEMBL13087747 0.86 GAA (0.31)
SCHEMBL107034 0.86 GAA (0.31)
SCHEMBL47390 0.85 KMT2A (0.35) ALDH1A1
SCHEMBL14556808 0.84 HSD11B1 (0.34) HSD11B1DPP4MDH1MDH2ALDH1A1
SCHEMBL13241926 0.84 ALDH1A1 (0.40) HSD11B1ALDH1A1PKMNPSR1
SCHEMBL16285749 0.84 GAA (0.33) ALDH1A1PKM
SCHEMBL12548254 0.83 PKM (0.36) HSD11B1ALDH1A1PKMNPSR1
SCHEMBL10203943 0.82 DPP4 (0.31) DPP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20230236506-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-07-27 US disclosed
US-20230229082-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-07-20 US disclosed
US-9874816-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2018-01-23 US disclosed
US-20170363961-A9 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
US-20170115570-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2017-04-27 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160363859-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-12-15 US disclosed
US-20160202608-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-07-14 US disclosed
US-7851140-B2 Resist composition for negative tone development and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-12-14 US disclosed
US-20100167201-A1 RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-01 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-7332258-B2 Positive resist composition and process for forming pattern using the same FUJIFILM CORPORATION (JP) 2008-02-19 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230229082-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN RAD51, RER1, RAD1 HSD11B1 1948/4885DPP4 4860/4885MDH1 1933/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.