SCHEMBL9946240

SCHEMBL9946240

CC(=O)OCCNS(=O)(=O)C(F)(F)F

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.46
ALDH1A1 P00352 3/20 0.36
CA2 P00918 6/20 0.35
CA1 P00915 4/20 0.35
CHRM5 P08912 2/20 0.35
CHRM1 P11229 2/20 0.35
CHRM3 P20309 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
PGR P06401 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM4 P08173 1/20 0.35
HTR1A P08908 1/20 0.35
CHRNB2 P17787 1/20 0.35
TBXA2R P21731 1/20 0.35
CHRNB4 P30926 1/20 0.35
CHRNA3 P32297 1/20 0.35
CHRNA7 P36544 1/20 0.35
CHRNA4 P43681 1/20 0.35
CHRNA10 Q9GZZ6 1/20 0.35
CHRNA9 Q9UGM1 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19042271 0.89 EPHX1 (0.36) EPHX1ALDH1A1CA2CA1CHRM5
SCHEMBL15681507 0.86 EPHX1 (0.43) EPHX1CA2CA1SMN1; SMN2MAPK1
SCHEMBL19042267 0.83 CA1 (0.44) EPHX1ALDH1A1CA2CA1CHRM5
SCHEMBL217339 0.83 THRB (0.42) EPHX1ALDH1A1CA2CA1SMN1; SMN2
SCHEMBL23963384 0.82 EPHX1 (0.43) EPHX1CA2CA1GAAIDO1
SCHEMBL19042275 0.82 CA2 (0.50) ALDH1A1CA2CA1NEK1
SCHEMBL28593098 0.81 EPHX1 (0.42) EPHX1CA2CA1CHRM5CHRM1
SCHEMBL10053107 0.81 EPHX1 (0.42) EPHX1CA2CA1IDO1
SCHEMBL13181277 0.80 EPHX1 (0.41) EPHX1CA2CA1IDO1
SCHEMBL5229286 0.79 ALDH1A1 (0.40) ALDH1A1CA2CA1CHRM5CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-9740105-B2 Resist pattern formation method and resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2017-08-22 US disclosed
US-9696625-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-07-04 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-9678423-B2 Resist composition, method for forming resist pattern, acid generator and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-13 US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130143159-A1 RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-06 US disclosed
US-20130065180-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-14 US disclosed
US-20120328982-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120308931-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-06 US disclosed
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-29 US disclosed
US-20120276481-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-01 US disclosed
US-20120264058-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-18 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR SCO2, ASIC1, NOX1 EPHX1 903/4885ALDH1A1 1048/4885CA2 152/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.