SCHEMBL9976287

SCHEMBL9976287

COCN1CCCN(C)C1=O

nearest known ligand 0.40

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
PER2 O15055 2/20 0.39
CRY2 Q49AN0 1/20 0.36
BRD4 O60885 1/20 0.35
BRD2 P25440 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6935640 0.88 PER2 (0.33) PER2CRY2
SCHEMBL2616354 0.87 PIK3CD (0.33) PER2
SCHEMBL27525130 0.86 PER2 (0.33) PER2CRY2
SCHEMBL25666517 0.79 HTT (0.39) PER2CRY2BRD4BRD2
SCHEMBL9972942 0.79 MEN1 (0.32)
SCHEMBL6754694 0.78 LMNA (0.31)
SCHEMBL19383610 0.77 PER2 (0.42) PER2CRY2BRD4BRD2
SCHEMBL11934366 0.77 PER2 (0.42) PER2CRY2BRD4BRD2
SCHEMBL13208691 0.75 PER2 (0.41) PER2CRY2BRD4BRD2
SCHEMBL1446202 0.75 PER2 (0.41) PER2CRY2BRD4BRD2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9431295-B2 Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same GLOBALFOUNDRIES INC. (KY) 2016-08-30 US disclosed
US-9235124-B2 Planarization over topography with molecular glass materials GLOBALFOUNDRIES INC. (KY) 2016-01-12 US disclosed
US-9059249-B2 Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-06-16 US disclosed
US-8952539-B2 Methods for fabrication of an air gap-containing interconnect structure INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-02-10 US disclosed
US-8896120-B2 Structures and methods for air gap integration INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-11-25 US disclosed
US-8795556-B2 Self-aligned permanent on-chip interconnect structure formed by pitch splitting INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-08-05 US disclosed
US-20140131880-A1 METHODS FOR FABRICATION OF AN AIR GAP-CONTAINING INTERCONNECT STRUCTURE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-15 US disclosed
US-8642252-B2 Methods for fabrication of an air gap-containing interconnect structure INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-02-04 US disclosed
US-8637395-B2 Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-01-28 US disclosed
US-8487411-B2 Multiple patterning using improved patternable low-κ dielectric materials INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-07-16 US disclosed
US-20110260326-A1 STRUCTURES AND METHODS FOR AIR GAP INTEGRATION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-10-27 US disclosed
US-20110250544-A1 BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-10-13 US disclosed
US-20110221062-A1 METHODS FOR FABRICATION OF AN AIR GAP-CONTAINING INTERCONNECT STRUCTURE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-09-15 US disclosed
US-20110115090-A1 INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-05-19 US disclosed
US-20110115094-A1 STRUCTURES AND METHODS FOR PHOTO-PATTERNABLE LOW-k (PPLK) INTEGRATION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-05-19 US disclosed
US-20110079579-A1 PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-04-07 US disclosed
US-20110074044-A1 PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-03-31 US disclosed
WO-2009022224-A2 ANTIREFLECTIVE COATING COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-02-19 WO disclosed
US-7399573-B2 Method for using negative tone silicon-containing resist for e-beam lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-07-15 US disclosed
US-20080102400-A1 NEGATIVE TONE SILICON-CONTAINING RESIST FOR E-BEAM LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-05-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110250544-A1 BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS SDC2, MYOC, S100A9 PER2 1289/4885CRY2 106/4885BRD4 4664/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.