Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TRPV1 | Q8NER1 | 19/20 | 0.59 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.57 |
| ▸ | MEN1 | O00255 | 1/20 | 0.57 |
| ▸ | MAPT | P10636 | 1/20 | 0.57 |
| ▸ | RAB9A | P51151 | 1/20 | 0.57 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.57 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10040388 | 0.88 | MEN1 (0.48) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL13588247 | 0.85 | TRPV1 (0.50) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL30125341 | 0.84 | TRPV1 (0.64) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL1413170 | 0.84 | TRPV1 (0.64) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL30369173 | 0.83 | RAB9A (0.61) | KDM4EMEN1MAPTRAB9AKMT2A | |
| SCHEMBL194202 | 0.83 | RAB9A (0.61) | KDM4EMEN1MAPTRAB9AKMT2A | |
| SCHEMBL30473469 | 0.82 | KMT2A (0.54) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL329974 | 0.82 | KMT2A (0.54) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL15782671 | 0.81 | TRPV1 (0.72) | TRPV1KDM4EMEN1MAPTRAB9A | |
| SCHEMBL2676769 | 0.80 | TRPV1 (0.70) | TRPV1KDM4EMEN1MAPTRAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9213235-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-15 | — | — | US | disclosed |
| US-9213235-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-15 | — | — | US | disclosed |
| US-9201304-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9201304-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9182668-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9182668-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9140988-B2 | Positive resist composition, monomer, polymer, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120220112-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120220112-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120009527-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120009527-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | RER1, NOC2L, RAD51 | TRPV1 4248/4885KDM4E 3848/4885MEN1 468/4885 |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | PARG, RAD51, CD38 | TRPV1 3158/4885KDM4E 445/4885MEN1 428/4885 |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1A, ADH1C, ADH5 | TRPV1 1559/4885KDM4E 1704/4885MEN1 1345/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.