SCHEMBL10074663

SCHEMBL10074663

O=C(Cl)c1ccc(-c2ccc(COCl)cc2C(F)(F)F)c(C(F)(F)F)c1

nearest known ligand 0.40

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
RXRA P19793 2/20 0.40
RXRB P28702 2/20 0.40
RXRG P48443 2/20 0.40
S1PR1 P21453 7/20 0.40
IDO1 P14902 2/20 0.39
MRGPRX4 Q96LA9 5/20 0.38
SRD5A2 P31213 1/20 0.37
S1PR3 Q99500 2/20 0.37
ALDH1A1 P00352 1/20 0.36
KDM4C Q9H3R0 1/20 0.36
NR4A2 P43354 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30892335 0.83 GLA (0.45) SRD5A2
SCHEMBL278277 0.83 GLA (0.45) SRD5A2
SCHEMBL22199854 0.76 KIF11 (0.46) SRD5A2
SCHEMBL15247155 0.75 GLA (0.36) SRD5A2
SCHEMBL15745809 0.75 TRPV1 (0.39) SRD5A2ALDH1A1
SCHEMBL28424524 0.74 ADH5 (0.48) RXRARXRBRXRGSRD5A2
SCHEMBL10036561 0.73 PARP10 (0.46) RXRARXRBRXRGMRGPRX4ALDH1A1
SCHEMBL31542017 0.71 NOTUM (0.42) RXRARXRBRXRGALDH1A1
SCHEMBL2680326 0.71 NOTUM (0.42) RXRARXRBRXRGALDH1A1
SCHEMBL10323581 0.71 RXRA (0.61) RXRARXRBRXRGS1PR1MRGPRX4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed