Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC6A4 | P31645 | 4/20 | 0.43 |
| ▸ | SLC6A3 | Q01959 | 3/20 | 0.43 |
| ▸ | SLC6A2 | P23975 | 3/20 | 0.43 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.40 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | TP53 | P04637 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.40 |
| ▸ | AOC3 | Q16853 | 2/20 | 0.39 |
| ▸ | HTR2A | P28223 | 1/20 | 0.36 |
| ▸ | HRH1 | P35367 | 1/20 | 0.36 |
| ▸ | HTR2B | P41595 | 1/20 | 0.36 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | BRD4 | O60885 | 1/20 | 0.34 |
| ▸ | FFAR2 | O15552 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14317673 | 0.84 | MAOB (0.51) | MAPK1MEN1KMT2A | |
| SCHEMBL29293451 | 0.80 | ESR1 (0.31) | TSHRMAPK1TDP1 | |
| SCHEMBL19184276 | 0.79 | RIPK1 (0.33) | SLC6A4SLC6A3SLC6A2AOC3 | |
| SCHEMBL12361680 | 0.79 | AOC3 (0.39) | SLC6A4SLC6A3SLC6A2MAPK1LMNA | |
| SCHEMBL784711 | 0.79 | ESR1 (0.44) | SLC6A4SLC6A3SLC6A2TSHRHIF1A | |
| SCHEMBL12646169 | 0.79 | — | — | |
| SCHEMBL12361552 | 0.79 | ALDH1A1 (0.38) | LMNAHPGDHTR2AMEN1KMT2A | |
| SCHEMBL11960807 | 0.79 | ESR1 (0.44) | SLC6A4SLC6A3SLC6A2TSHRHIF1A | |
| SCHEMBL13702479 | 0.79 | ALDH1A1 (0.35) | TSHRMAPK1TDP1HPGDMEN1 | |
| SCHEMBL14646064 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023054126-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN-FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2023-04-06 | — | — | WO | disclosed |
| US-11231650-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-25 | — | — | US | disclosed |
| US-11131926-B2 | Resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-09-28 | — | — | US | disclosed |
| US-10725377-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-28 | — | — | US | disclosed |
| US-20200133121-A1 | ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| EP-2492746-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2019-11-20 | — | — | EP | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| EP-3081987-B1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2018-06-06 | — | — | EP | disclosed |
| US-9969829-B2 | Polymer compound, negative resist composition, laminate, patterning process, and compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| EP-2360526-B1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | SHINETSU CHEMICAL CO (JP) | 2017-08-16 | — | — | EP | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| EP-2362267-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-01-23 | — | — | EP | disclosed |
| EP-2492746-A2 | Chemically amplified negative resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-08-29 | — | — | EP | disclosed |
| EP-2412733-A1 | Polymer, chemically amplified negative resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-02-01 | — | — | EP | disclosed |
| EP-2362267-A1 | Chemically amplified negative resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-31 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200133121-A1 | ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SLC6A5, SLC11A2, LARP7 | SLC6A4 772/4885SLC6A3 1341/4885SLC6A2 464/4885 |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | SLC6A4 2512/4885SLC6A3 4060/4885SLC6A2 3049/4885 |
| US-10725377-B2 | Chemically amplified negative resist composition and resist pattern forming process | SLC11A2, POLR2B, POLI | SLC6A4 2512/4885SLC6A3 4060/4885SLC6A2 3049/4885 |
| US-11131926-B2 | Resist composition and resist patterning process | SLC11A2, RER1, GPS1 | SLC6A4 3247/4885SLC6A3 2949/4885SLC6A2 3004/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.