Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.34 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.33 |
| ▸ | SCN9A | Q15858 | 15/20 | 0.32 |
| ▸ | SCN5A | Q14524 | 4/20 | 0.31 |
| ▸ | SCN7A | Q01118 | 3/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14818361 | 0.87 | GBA2 (0.37) | EPHX2SCN9ASCN5ASCN7A | |
| SCHEMBL12308108 | 0.82 | EPHX2 (0.37) | TSHRNPSR1EPHX2 | |
| SCHEMBL685937 | 0.81 | TSHR (0.35) | TSHRNPSR1EPHX2SCN9A | |
| SCHEMBL22590269 | 0.80 | TSHR (0.38) | TSHRNPSR1EPHX2SCN9ASCN5A | |
| SCHEMBL687068 | 0.80 | TSHR (0.38) | TSHRNPSR1EPHX2SCN9ASCN5A | |
| SCHEMBL686224 | 0.80 | GBA2 (0.35) | SCN9A | |
| SCHEMBL17231130 | 0.80 | EPHX2 (0.36) | TSHRNPSR1EPHX2 | |
| SCHEMBL17795906 | 0.79 | TSHR (0.40) | TSHRNPSR1EPHX2 | |
| SCHEMBL18780516 | 0.78 | GBA2 (0.44) | EPHX2 | |
| SCHEMBL26064079 | 0.78 | TSHR (0.44) | TSHRNPSR1EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9221785-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9063414-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-9051405-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-09 | — | — | US | disclosed |
| US-20150132698-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-05-14 | — | — | US | disclosed |
| US-8993210-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100323296-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-16 | — | — | US | disclosed |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100304294-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100304292-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100203446-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-08-12 | — | — | US | disclosed |
| US-7611822-B2 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-11-03 | — | — | US | disclosed |
| US-20090042128-A1 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-02-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | THEM6, INTS6, CRY1 | TSHR 528/4885NPSR1 2030/4885EPHX2 3621/4885 |
| US-20090042128-A1 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | FRG1, ACSL3, HCN3 | TSHR 2636/4885NPSR1 3086/4885EPHX2 3131/4885 |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, H1-0, H1-2 | TSHR 1877/4885NPSR1 1353/4885EPHX2 2744/4885 |
| US-20100304294-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | AFF1, F12, AP2A1 | TSHR 1242/4885NPSR1 527/4885EPHX2 2997/4885 |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, XPOT, ERCC4 | TSHR 3175/4885NPSR1 2009/4885EPHX2 3468/4885 |
| US-20100304292-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | CRY1, CHRM1, C1S | TSHR 1281/4885NPSR1 1129/4885EPHX2 3732/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | TSHR 1598/4885NPSR1 915/4885EPHX2 700/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.