SCHEMBL10138477

SCHEMBL10138477

CCC(C)c1ccc(OC(C)OCC2CCOC2)c(C(=O)OC)c1

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
RORC P51449 2/20 0.39
IRAK4 Q9NWZ3 4/20 0.38
PDE4D Q08499 3/20 0.36
PDE4B Q07343 2/20 0.36
PDE4A P27815 1/20 0.36
PDE4C Q08493 1/20 0.36
GRM4 Q14833 5/20 0.35
ACACB O00763 2/20 0.34
NPSR1 Q6W5P4 1/20 0.33
NPC1 O15118 1/20 0.33
HSP90AA1 P07900 1/20 0.33
RAB9A P51151 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10138464 0.87 KDM4E (0.36) IRAK4PDE4DPDE4BPDE4APDE4C
SCHEMBL10138857 0.80 NPC1 (0.39) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10088188 0.78 ALDH1A1 (0.39) NPSR1L3MBTL1
SCHEMBL10138459 0.76 HIF1A (0.40) PDE4DPDE4BPDE4APDE4CNPSR1
SCHEMBL10138462 0.75 NPSR1 (0.36) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL12056817 0.74 CA1 (0.44) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10138465 0.74 PPARG (0.40) RORCNPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL10138480 0.73 ALDH1A1 (0.41) NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL12054789 0.73 NPSR1 (0.39) NPSR1NPC1HSP90AA1RAB9AL3MBTL1
SCHEMBL18903275 0.73 KDM4E (0.35) IRAK4PDE4DPDE4BPDE4APDE4C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed