SCHEMBL10138495

SCHEMBL10138495

CCC(C)c1cc(O)cc(Br)c1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.42
GAA P10253 2/20 0.42
ALOX15 P16050 2/20 0.42
USP2 O75604 1/20 0.42
PKM P14618 1/20 0.42
HPGD P15428 1/20 0.42
HSD17B10 Q99714 1/20 0.42
HDAC4 P56524 1/20 0.40
HDAC2 Q92769 1/20 0.40
HDAC8 Q9BY41 1/20 0.40
GABRA1 P14867 1/20 0.38
GABRB1 P18505 1/20 0.38
LMNA P02545 2/20 0.37
MAPT P10636 2/20 0.37
MEN1 O00255 1/20 0.37
TP53 P04637 1/20 0.37
MAPK1 P28482 1/20 0.37
KMT2A Q03164 1/20 0.37
TSHR P16473 2/20 0.35
ADRB2 P07550 5/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6536206 0.85 ALOX15 (0.48) ALDH1A1GAAALOX15USP2PKM
SCHEMBL69138 0.85 ALOX15 (0.48) ALDH1A1GAAALOX15USP2PKM
SCHEMBL2758514 0.85 ALDH1A1 (0.39) ALDH1A1GAAALOX15USP2PKM
SCHEMBL20483093 0.79 GABRA1 (0.48) ALDH1A1GAAALOX15HPGDHDAC4
SCHEMBL11671634 0.78 ALDH1A1 (0.48) ALDH1A1GAAALOX15USP2PKM
SCHEMBL19304391 0.76 ALDH1A1 (0.38) ALDH1A1GAAALOX15USP2PKM
SCHEMBL7878377 0.76 CA12 (0.46) ALDH1A1GAAALOX15USP2PKM
SCHEMBL13920802 0.75 ALDH1A1 (0.44) ALDH1A1GAAALOX15USP2PKM
SCHEMBL682802 0.73 GABRA1 (0.54) ALDH1A1GAAALOX15USP2PKM
Acrylic Acid SCHEMBL28533637 0.73 ALDH1A1 (0.37) ALDH1A1GAAALOX15USP2PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8084183-B2 Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-12-27 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090047598-A1 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed