Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 1/20 | 0.54 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.54 |
| ▸ | RORC | P51449 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 4/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.40 |
| ▸ | USP2 | O75604 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | GAA | P10253 | 1/20 | 0.40 |
| ▸ | PKM | P14618 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.40 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.38 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.38 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 3/20 | 0.36 |
| ▸ | HIF1A | Q16665 | 3/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31491205 | 0.86 | GABRA1 (0.41) | GABRA1GABRB2RORCTSHRCYP3A4 | |
| SCHEMBL6536206 | 0.82 | ALOX15 (0.48) | RORCTSHRCYP3A4CYP2C9CYP2C19 | |
| SCHEMBL69138 | 0.82 | ALOX15 (0.48) | TSHRCYP3A4CYP2C9CYP2C19CYP1A2 | |
| SCHEMBL5168628 | 0.80 | GABRA1 (0.62) | GABRA1GABRB2TSHRCYP3A4CYP2C9 | |
| SCHEMBL25468602 | 0.78 | USP2 (0.36) | GABRA1GABRB2RORCTSHRCYP3A4 | |
| SCHEMBL13466014 | 0.78 | RORC (0.35) | GABRA1GABRB2RORCTSHRCYP3A4 | |
| SCHEMBL22861022 | 0.78 | TACR1 (0.38) | GABRA1GABRB2RORCTSHRCYP3A4 | |
| SCHEMBL6907067 | 0.76 | GABRA1 (0.62) | GABRA1GABRB2TSHRCYP3A4CYP2C9 | |
| SCHEMBL26999645 | 0.76 | RXRA (0.42) | RORCTSHRCYP3A4CYP2C9CYP2C19 | |
| SCHEMBL25468626 | 0.75 | ALDH1A1 (0.38) | RORCTSHRCYP3A4CYP2C9CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180120705-A1 | PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-8735048-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2014-05-27 | — | — | US | disclosed |
| US-8642245-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same | FUJIFILM CORPORATION (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8574814-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2013-11-05 | — | — | US | disclosed |
| US-8546063-B2 | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays | FUJIFILM CORPORATION (JP) | 2013-10-01 | — | — | US | disclosed |
| US-8507174-B2 | Positive resist composition, pattern forming method using the composition, and compound for use in the composition | FUJIFILM CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-20130004888-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120301817-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120231393-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-09-13 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-8084183-B2 | Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-12-27 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090047598-A1 | RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-02-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | CROCC, ACTR2, MRE11 | GABRA1 1723/4885GABRB2 2221/4885RORC 3787/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.