SCHEMBL10148573

SCHEMBL10148573

CCC(C)c1ccc(OC(C)OCCCc2cc(OC)cc(OC)c2)c(C(=O)OC)c1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 1/20 0.36
HSP90AA1 P07900 1/20 0.36
RAB9A P51151 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CNR1 P21554 8/20 0.35
CNR2 P34972 8/20 0.35
ADRB2 P07550 1/20 0.34
ADRB1 P08588 1/20 0.34
ADRB3 P13945 1/20 0.34
ADRA1D P25100 1/20 0.34
ADRA1A P35348 1/20 0.34
ADRA1B P35368 1/20 0.34
ALDH1A1 P00352 4/20 0.33
MAPT P10636 3/20 0.33
KDM4E B2RXH2 1/20 0.33
MEN1 O00255 1/20 0.33
POLB P06746 1/20 0.33
KMT2A Q03164 1/20 0.33
GAA P10253 1/20 0.33
TAS1R3 Q7RTX0 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12054789 0.82 NPSR1 (0.39) NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1
SCHEMBL10149081 0.81 PPARG (0.40) NPC1HSP90AA1RAB9AL3MBTL1ADRB2
SCHEMBL10138857 0.81 NPC1 (0.39) NPC1HSP90AA1RAB9AL3MBTL1ADRB2
SCHEMBL10149078 0.79 MAPT (0.35) HSP90AA1ALDH1A1MAPTKDM4EMEN1
SCHEMBL14086705 0.79 RAB9A (0.43) NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1
SCHEMBL12056817 0.77 CA1 (0.44) NPC1HSP90AA1RAB9AL3MBTL1ADRB2
SCHEMBL13920797 0.75 NR3C1 (0.36) NPC1HSP90AA1RAB9AL3MBTL1ADRB2
SCHEMBL10088188 0.75 ALDH1A1 (0.39) L3MBTL1ALDH1A1MAPTKDM4EMEN1
SCHEMBL10138464 0.73 KDM4E (0.36) NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1
SCHEMBL10148533 0.72 KDM4E (0.37) NPC1HSP90AA1RAB9AL3MBTL1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed