SCHEMBL10228451

SCHEMBL10228451

CC(C)COCC1CCCCC1

nearest known ligand 0.41

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
PRMT5 O14744 1/20 0.36
WDR77 Q9BQA1 1/20 0.36
SLC1A3 P43003 2/20 0.34
SLC1A2 P43004 2/20 0.34
SLC1A1 P43005 2/20 0.34
GBA1 P04062 2/20 0.33
UGCG Q16739 2/20 0.33
GBA2 Q9HCG7 2/20 0.33
CTSL P07711 1/20 0.33
CTSB P07858 1/20 0.33
CTSK P43235 1/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12056418 0.98 PRMT5 (0.34) PRMT5WDR77SLC1A3SLC1A2SLC1A1
SCHEMBL131722 0.93 SLC1A3 (0.32) PRMT5WDR77SLC1A3SLC1A2SLC1A1
SCHEMBL130874 0.88
SCHEMBL13002262 0.79 PRMT5 (0.33) PRMT5WDR77SLC1A3SLC1A2SLC1A1
SCHEMBL20266033 0.78 CTSK (0.35) SLC1A3SLC1A2SLC1A1GBA1UGCG
SCHEMBL12687460 0.78 SPHK2 (0.36) PRMT5WDR77LMNACYP1A2
SCHEMBL12687468 0.78 SPHK2 (0.36) PRMT5WDR77LMNACYP1A2
SCHEMBL10307716 0.78 TDP1 (0.40) GBA1
SCHEMBL8977001 0.78
SCHEMBL19289097 0.78 SHBG (0.32) PRMT5WDR77SLC1A3SLC1A2SLC1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024026486-A2 CDK2 INHIBITORS AND METHODS OF USING THE SAME CEDILLA THERAPEUTICS, INC. (US) 2024-02-01 WO disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-20230185191-A1 COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-06-15 US disclosed
US-20230185191-A1 COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-06-15 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
CN-109310601-B Fragrance material 高砂香料工业株式会社 2022-05-24 CN disclosed
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-12 US disclosed
US-20210063880-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING SAME, COMPOUND AND RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-04 US disclosed
US-20210047457-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-18 US disclosed
US-8846292-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-30 US disclosed
US-20130150627-A1 PURIFICATION METHOD FOR CYCLIC COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-06-13 US disclosed
US-20130122423-A1 COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-05-16 US disclosed
US-8334290-B2 CETP inhibitors MERCK SHARP & DOHME CORP. (US) 2012-12-18 US disclosed
US-8334290-B2 CETP inhibitors MERCK SHARP & DOHME CORP. (US) 2012-12-18 US disclosed
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-8110334-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-02-07 US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
US-20090264405-A1 Cetp Inhibitors MERCK SHARP & DOHME LLC 2009-10-22 US disclosed
US-20090264405-A1 Cetp Inhibitors MERCK SHARP & DOHME LLC 2009-10-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090264405-A1 Cetp Inhibitors CETP, APOB, PCSK9 PRMT5 2732/4885WDR77 1050/4885SLC1A3 4180/4885
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 PRMT5 433/4885WDR77 133/4885SLC1A3 1835/4885
US-20130150627-A1 PURIFICATION METHOD FOR CYCLIC COMPOUND PCLAF, PCNA, VIP PRMT5 3073/4885WDR77 4013/4885SLC1A3 4305/4885
US-20230185191-A1 COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT SOAT2, SOAT1, FAR1 PRMT5 2682/4885WDR77 2783/4885SLC1A3 1379/4885
US-20130122423-A1 COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD DDB1, DNAJB11, RAD51 PRMT5 3192/4885WDR77 2995/4885SLC1A3 4856/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R PRMT5 132/4885WDR77 2073/4885SLC1A3 2342/4885
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION PARG, RAD51, SRMS PRMT5 1981/4885WDR77 2004/4885SLC1A3 4366/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 PRMT5 2497/4885WDR77 2275/4885SLC1A3 4037/4885
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MLLT1, MLLT3, KDM2B PRMT5 243/4885WDR77 3382/4885SLC1A3 1634/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.