Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 2/20 | 0.46 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.44 |
| ▸ | TBXAS1 | P24557 | 1/20 | 0.44 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.43 |
| ▸ | XBP1 | P17861 | 1/20 | 0.43 |
| ▸ | HTT | P42858 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10447649 | 0.90 | HTR6 (0.47) | IDO1 | |
| SCHEMBL19249507 | 0.84 | IDO1 (0.46) | IDO1CYP19A1TBXAS1SIGMAR1ALDH1A1 | |
| SCHEMBL28768500 | 0.83 | IDO1 (0.49) | IDO1CYP19A1TBXAS1SIGMAR1 | |
| SCHEMBL20433849 | 0.83 | IDO1 (0.49) | IDO1CYP19A1TBXAS1SIGMAR1 | |
| SCHEMBL30129841 | 0.81 | CYP19A1 (0.49) | IDO1CYP19A1TBXAS1SIGMAR1HTT | |
| SCHEMBL598590 | 0.81 | CYP19A1 (0.49) | IDO1CYP19A1TBXAS1SIGMAR1HTT | |
| SCHEMBL22721447 | 0.81 | CYP19A1 (0.49) | IDO1CYP19A1TBXAS1SIGMAR1HTT | |
| SCHEMBL11948316 | 0.79 | IDO1 (0.44) | IDO1CYP19A1TBXAS1SIGMAR1 | |
| SCHEMBL5541899 | 0.78 | CYP19A1 (0.54) | CYP19A1TBXAS1SIGMAR1 | |
| Ether SCHEMBL10810294 | 0.77 | IDO1 (0.46) | IDO1ALDH1A1XBP1HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-17 | — | — | US | disclosed |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-16 | — | — | US | disclosed |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| US-10457761-B2 | Polymer, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-29 | — | — | US | disclosed |
| US-10191373-B2 | Method for producing polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| US-10025180-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-17 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B3, KAT5 | IDO1 3630/4885CYP19A1 4201/4885TBXAS1 4781/4885 |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B5, EIF2B3 | IDO1 3197/4885CYP19A1 3516/4885TBXAS1 4795/4885 |
| US-20200223796-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, EIF2B5, EIF2B3 | IDO1 3197/4885CYP19A1 3516/4885TBXAS1 4795/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | IDO1 4605/4885CYP19A1 2372/4885TBXAS1 4524/4885 |
| US-10025180-B2 | Sulfonium compound, resist composition, and patterning process | SRR, SPIN2B, SPIN4 | IDO1 4414/4885CYP19A1 4484/4885TBXAS1 4019/4885 |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, ARF4, EIF2B3 | IDO1 3997/4885CYP19A1 4282/4885TBXAS1 4795/4885 |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, EEF2, EEF1G | IDO1 4810/4885CYP19A1 4338/4885TBXAS1 4591/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.