SCHEMBL10447692

SCHEMBL10447692

CCOCC(C)(CC)CC

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
ALDH1A1 P00352 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1561949 0.94 TSHR (0.33) TSHRTDP1ALDH1A1
SCHEMBL13103975 0.87 TSHR (0.38) TSHRTDP1ALDH1A1
SCHEMBL4986973 0.87 ALDH1A1 (0.33) ALDH1A1
SCHEMBL2608664 0.84 ALDH1A1 (0.32) TSHRTDP1ALDH1A1
SCHEMBL13360852 0.84 ALDH1A1 (0.36) ALDH1A1
SCHEMBL12922156 0.81 TSHR (0.33) TSHRTDP1ALDH1A1
SCHEMBL18898027 0.80
SCHEMBL23905705 0.77
SCHEMBL11949122 0.77 THRB (0.35) TSHRTDP1
SCHEMBL10017804 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-9709890-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-18 US disclosed
US-9709890-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-18 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9618850-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-9618850-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20120315581-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-13 US disclosed
US-20120315581-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-13 US disclosed
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120288691-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-15 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed