Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18635982 | 0.90 | TSHR (0.35) | ALDH1A1TSHRTDP1 | |
| SCHEMBL10017804 | 0.90 | — | — | |
| SCHEMBL1561949 | 0.89 | TSHR (0.33) | ALDH1A1TSHRTDP1 | |
| SCHEMBL812869 | 0.87 | TSHR (0.40) | ALDH1A1TSHRTDP1 | |
| SCHEMBL10447692 | 0.84 | TSHR (0.33) | ALDH1A1TSHRTDP1 | |
| SCHEMBL1561508 | 0.81 | LMNA (0.41) | TSHRTDP1 | |
| SCHEMBL14469421 | 0.81 | TSHR (0.30) | TSHR | |
| SCHEMBL13354370 | 0.81 | — | — | |
| SCHEMBL14384868 | 0.79 | — | — | |
| SCHEMBL2608666 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11662663-B2 | Substrate protective film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-30 | — | — | US | disclosed |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-12 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120135357-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120045724-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-23 | — | — | US | disclosed |
| US-20120028190-A1 | POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20110212391-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
| WO-2009133168-A1 | ACTIVATOR FOR EPOXY RESIN COMPOSITIONS | SIKA TECHNOLOGY AG (CH) | 2009-11-05 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | STS, SLC6A5, SLC6A9 | ALDH1A1 3978/4885TSHR 3157/4885TDP1 3899/4885 |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | ALDH1A1 4867/4885TSHR 72/4885TDP1 4275/4885 |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | C1R, LBR, SMARCC2 | ALDH1A1 4727/4885TSHR 2314/4885TDP1 4790/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | ALDH1A1 3150/4885TSHR 4142/4885TDP1 3997/4885 |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, ETV1, VPS4B | ALDH1A1 4625/4885TSHR 3417/4885TDP1 2411/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | ALDH1A1 3516/4885TSHR 3290/4885TDP1 3780/4885 |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GFER, GNMT, DNER | ALDH1A1 3192/4885TSHR 2359/4885TDP1 4306/4885 |
| US-11693314-B2 | Resist composition and patterning process | EIF2B1, EIF2B5, EIF2B3 | ALDH1A1 3516/4885TSHR 3290/4885TDP1 3780/4885 |
| US-20120045724-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SLC6A5, NES, STS | ALDH1A1 3412/4885TSHR 3084/4885TDP1 3654/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.