Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 1/20 | 0.68 |
| ▸ | CA1 | P00915 | 1/20 | 0.68 |
| ▸ | CA2 | P00918 | 1/20 | 0.68 |
| ▸ | CA6 | P23280 | 1/20 | 0.68 |
| ▸ | CA9 | Q16790 | 1/20 | 0.68 |
| ▸ | TSHR | P16473 | 2/20 | 0.63 |
| ▸ | DAO | P14920 | 1/20 | 0.63 |
| ▸ | NAPRT | Q6XQN6 | 1/20 | 0.63 |
| ▸ | KMO | O15229 | 1/20 | 0.62 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.62 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.62 |
| ▸ | HPGD | P15428 | 1/20 | 0.62 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.62 |
| ▸ | UNG | P13051 | 1/20 | 0.60 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.59 |
| ▸ | ATM | Q13315 | 1/20 | 0.59 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.59 |
| ▸ | FOLH1 | Q04609 | 1/20 | 0.58 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.58 |
| ▸ | TP53 | P04637 | 2/20 | 0.56 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Isophthalic Acid SCHEMBL7738212 | 1.00 | CA12 (0.68) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL28462260 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL20500514 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL147366 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL22462 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL28756611 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL2512374 | 0.97 | CA12 (0.71) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL23035005 | 0.94 | CA12 (0.68) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL1557619 | 0.94 | CA12 (0.68) | CA12CA1CA2CA6CA9 | |
| Isophthalic Acid SCHEMBL10898480 | 0.94 | CA12 (0.68) | CA12CA1CA2CA6CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 139 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115572364-A | Solvent type high-molecular phosphate and preparation method and application thereof | 重庆宏国聚材科技有限责任公司 | 2023-01-06 | — | — | CN | claimed |
| US-4200586-A | Inhibiting the carbon-carbon double bond isomerization of substituted or unsubstituted hydrocarbon compounds | PHILLIPS PETROLEUM COMPANY (US) | 1980-04-29 | — | — | US | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| WO-2007049232-A2 | IMPROVED DISPERSIONS OF HIGH CARBOXYL POLYAMIDES INTO POLYESTERS USING AN INTERFACIAL TENSION REDUCING AGENT | M & G POLIMERI ITALIA S.P.A. (IT) | 2007-05-03 | — | — | WO | disclosed |
| US-20070093615-A1 | Dispersions of High Carboxyl Polyamides Into Polyesters Using An Interfacial Tension Reducing Agent | M&G USA CORPORATION | 2007-04-26 | — | — | US | disclosed |
| US-6872451-B2 | Ionomeric oxygen scavenger compositions | CRYOVAC, INC. (US) | 2005-03-29 | — | — | US | disclosed |
| US-4834891-A | ALKALI METAL PHTHALATE, GLASS | DIRECTOR-GENERAL OF AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY (JP) | 1989-05-30 | — | — | US | disclosed |
| US-4468434-A | COATINGS, BRILLIANCE, POROSITY | TEIJIN LIMITED (JP) | 1984-08-28 | — | — | US | disclosed |
| US-4200586-A | Inhibiting the carbon-carbon double bond isomerization of substituted or unsubstituted hydrocarbon compounds | PHILLIPS PETROLEUM COMPANY (US) | 1980-04-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CA12 2033/4885CA1 710/4885CA2 3442/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA12 1804/4885CA1 667/4885CA2 1064/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CA12 1293/4885CA1 1026/4885CA2 2255/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CA12 1528/4885CA1 1449/4885CA2 2902/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA12 1973/4885CA1 964/4885CA2 2105/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CA12 1204/4885CA1 322/4885CA2 972/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.