SCHEMBL107246

SCHEMBL107246

O=S(=O)(F)N1CCCCCCC1

nearest known ligand 0.55

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.55
CA2 P00918 2/20 0.55
POLB P06746 1/20 0.55
TSHR P16473 4/20 0.52
KMT2A Q03164 3/20 0.52
USP2 O75604 1/20 0.44
KDM4E B2RXH2 1/20 0.44
CYP3A4 P08684 1/20 0.41
CYP2C9 P11712 1/20 0.41
CYP2C19 P33261 1/20 0.41
ALDH1A1 P00352 2/20 0.39
MEN1 O00255 1/20 0.39
FKBP1A P62942 2/20 0.38
GLA P06280 1/20 0.38
HPGD P15428 1/20 0.35
GAA P10253 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106410 1.00 CA1 (0.55) CA1CA2POLBTSHRKMT2A
SCHEMBL12935712 1.00 CA1 (0.55) CA1CA2POLBTSHRKMT2A
SCHEMBL31071498 0.97
SCHEMBL21033830 0.83 POLB (0.40) CA1CA2POLBTSHRKMT2A
SCHEMBL5280013 0.73 POLB (0.93) CA1CA2POLBTSHRKMT2A
SCHEMBL6259714 0.73 CA1 (0.45) CA1CA2POLBTSHRKMT2A
SCHEMBL9540497 0.71 CA1 (0.58) CA1CA2POLBTSHRKMT2A
SCHEMBL21356989 0.71 CA1 (1.00) CA1CA2POLBTSHRKMT2A
SCHEMBL417152 0.71 CA1 (0.58) CA1CA2POLBTSHRKMT2A
SCHEMBL9539931 0.71 CA1 (0.58) CA1CA2POLBTSHRKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551935-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160313645-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-10-27 US disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9116437-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-08-25 US disclosed
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-8541160-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2013-09-24 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-20130011785-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20120321855-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 US disclosed
US-20120219910-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120171618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-07-05 US disclosed
US-8148044-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-03 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-20110269072-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-11-03 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110223536-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-15 US disclosed
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AFF1, F12, AFF2 CA1 351/4885CA2 1009/4885POLB 887/4885
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION CROCC, ACTR2, MRE11 CA1 1240/4885CA2 1811/4885POLB 231/4885
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM RAD51, RER1, RXRA CA1 795/4885CA2 3775/4885POLB 443/4885
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, RXRA, XRN2 CA1 326/4885CA2 1664/4885POLB 487/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.