SCHEMBL107598

SCHEMBL107598

Oc1ccc(-[s+]2c3ccccc3c3ccccc32)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.38
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
CA3 P07451 2/20 0.38
CA4 P22748 2/20 0.38
CA9 Q16790 2/20 0.38
CA14 Q9ULX7 2/20 0.38
GLA P06280 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
MMP3 P08254 1/20 0.37
BCL2L1 Q07817 1/20 0.37
MEN1 O00255 5/20 0.36
KMT2A Q03164 5/20 0.36
MAPT P10636 4/20 0.36
NPC1 O15118 2/20 0.36
ALDH1A1 P00352 2/20 0.36
LMNA P02545 2/20 0.36
HPGD P15428 2/20 0.36
KDM4E B2RXH2 2/20 0.36
HSD17B10 Q99714 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13088245 0.88 MAOA (0.40) CA12CA1CA2CA3CA4
SCHEMBL29968036 0.77 ACHE (0.38) TDP1MEN1KMT2AMAPTNPC1
Iodide SCHEMBL3776654 0.76 ACHE (0.36) TDP1MEN1KMT2AMAPTNPC1
SCHEMBL13008847 0.75 TSHR (0.48) CA12CA1CA2CA3CA4
SCHEMBL13326153 0.74 ALDH1A1 (0.39) CA1CA2GLATDP1MEN1
SCHEMBL682975 0.74 TDP1 (0.48) CA12CA1CA2CA4CA9
SCHEMBL9149028 0.73 ACHE (0.34)
SCHEMBL29967560 0.72 MAOA (0.39) MAPTALDH1A1LMNAHPGDKDM4E
SCHEMBL2231298 0.72 TSHR (0.38) TDP1MEN1KMT2AMAPTLMNA
SCHEMBL29505884 0.72 TSHR (0.38) TDP1MEN1KMT2AMAPTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US disclosed
US-9482947-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9429841-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-30 US disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9417528-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9383645-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-07-05 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9250532-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-02-02 US disclosed
US-9244344-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2016-01-26 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20110318688-A1 SALT, ACID GENERATOR AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110212390-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
US-20110212391-A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
EP-2362267-A1 Chemically amplified negative resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-31 EP disclosed
EP-2362268-A1 Polymer, chemically amplified positive resist composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-31 EP disclosed
US-7851130-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2010-12-14 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080081288-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110318688-A1 SALT, ACID GENERATOR AND RESIST COMPOSITION RER1, FGFR1, NHERF1 CA12 234/4885CA1 69/4885CA2 33/4885
US-20080081288-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION PPOX, TYR, ERCC4 CA12 192/4885CA1 1855/4885CA2 786/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.