Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 5/20 | 0.58 |
| ▸ | THRA | P10827 | 2/20 | 0.44 |
| ▸ | THRB | P10828 | 3/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | FAAH | O00519 | 2/20 | 0.42 |
| ▸ | LYPLA1 | O75608 | 2/20 | 0.41 |
| ▸ | LYPLA2 | O95372 | 2/20 | 0.41 |
| ▸ | RELA | Q04206 | 4/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15471027 | 1.00 | DNM1 (0.58) | DNM1THRATHRBALDH1A1TSHR | |
| SCHEMBL16706526 | 0.92 | DNM1 (0.46) | DNM1THRATHRBFAAHLYPLA1 | |
| SCHEMBL6501307 | 0.85 | FAAH (0.54) | THRBTSHRFAAHRELA | |
| SCHEMBL10226704 | 0.85 | FAAH (0.54) | THRBTSHRFAAHRELA | |
| SCHEMBL10559523 | 0.84 | RELA (0.58) | DNM1THRATHRBRELA | |
| SCHEMBL301013 | 0.83 | FAAH (0.50) | FAAHRELA | |
| SCHEMBL29066804 | 0.81 | RELA (0.55) | DNM1THRALYPLA1LYPLA2RELA | |
| SCHEMBL1840814 | 0.81 | RELA (0.55) | DNM1THRALYPLA1LYPLA2RELA | |
| SCHEMBL14932179 | 0.81 | FAAH (0.50) | FAAHRELA | |
| Fluoride SCHEMBL29066794 | 0.80 | RELA (0.54) | DNM1THRALYPLA1LYPLA2RELA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 272 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20200319551-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR PRODUCING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2020-10-08 | — | — | US | disclosed |
| US-10705428-B2 | Organic processing liquid for patterning chemical amplification resist film, container for organic processing liquid for patterning chemical amplification resist film, and pattern forming method, method of manufacturing electronic device, and electronic device using the same | FUJIFILM CORPORATION (JP) | 2020-07-07 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| EP-1975712-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | MYB, NCL, SMYD2 | DNM1 2206/4885THRA 3229/4885THRB 4250/4885 |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | ADH5, SRRM2, ADH1A | DNM1 1253/4885THRA 3425/4885THRB 3315/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.