SCHEMBL108035

SCHEMBL108035

CC(C)O[Si](OC(C)C)(OC(C)C)c1cccc2ccccc12

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.39
ALDH1A1 P00352 4/20 0.39
CYP2A6 P11509 4/20 0.39
NR2E1 Q9Y466 2/20 0.37
CYP1A2 P05177 4/20 0.37
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
MAPT P10636 1/20 0.37
HTR1B P28222 2/20 0.36
TSHR P16473 2/20 0.36
HSD17B10 Q99714 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
ADRA2A P08913 2/20 0.35
ADRA2B P18089 2/20 0.35
ADRA2C P18825 2/20 0.35
ADRA1A P35348 2/20 0.35
ADRA1D P25100 1/20 0.35
ADRA1B P35368 1/20 0.35
CYP3A4 P08684 1/20 0.34
HPGD P15428 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29895557 1.00 KDM4E (0.39) KDM4EALDH1A1CYP2A6NR2E1CYP1A2
SCHEMBL2550554 0.90 HPRT1 (0.47) KDM4EALDH1A1CYP2A6NR2E1CYP1A2
SCHEMBL20658014 0.85 KDM4E (0.39) KDM4EALDH1A1CYP2A6NR2E1CYP1A2
SCHEMBL2545657 0.84 NQO1 (0.36) KDM4EALDH1A1CYP1A2MAPTHSD17B10
SCHEMBL426113 0.81 ALDH1A1 (0.32) ALDH1A1
SCHEMBL20872881 0.78 TRPM4 (0.38) KDM4EALDH1A1CYP2A6CYP1A2CYP2C9
SCHEMBL105580 0.78 ALDH1A1 (0.43) KDM4EALDH1A1CYP2A6CYP1A2CYP2C19
SCHEMBL29503122 0.78 ALDH1A1 (0.43) KDM4EALDH1A1CYP2A6CYP1A2CYP2C19
SCHEMBL2552884 0.77 ALDH1A1 (0.44) KDM4EALDH1A1CYP1A2MAPTTSHR
SCHEMBL6409390 0.76 HPGD (0.39) KDM4EALDH1A1CYP2A6CYP1A2CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 224 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
US-8993214-B2 Positive photosensitive siloxane composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2015-03-31 US claimed
EP-2628745-B1 Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process SHINETSU CHEMICAL CO (JP) 2015-03-25 EP claimed
US-20140335452-A1 POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-11-13 US claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592752-A2 COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
US-20050118742-A1 Method for reducing the adhesive properties of MEMS and anti-adhesion-coated device ROBERT BOSCH GMBH (DE) 2005-06-02 US disclosed
US-6586599-B1 Formating carbon-carbon bonds between carbocyclic halogen and organosilicon compounds in the presence of coordination catalysts, nitrogen compounds and bases; efficiency; catalysis UNIVERSITY OF NEW ORLEANS RESEARCH AND TECHNOLOGY FOUNDATION 2003-07-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA KDM4E 757/4885ALDH1A1 4472/4885CYP2A6 4671/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 KDM4E 588/4885ALDH1A1 4452/4885CYP2A6 4163/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR KDM4E 2013/4885ALDH1A1 1558/4885CYP2A6 1900/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.