SCHEMBL1088451

SCHEMBL1088451

Clc1ccc([S+](c2ccc(Cl)cc2)c2ccc(Cl)cc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA12 O43570 1/20 0.32
CA3 P07451 1/20 0.32
CA4 P22748 1/20 0.32
CA6 P23280 1/20 0.32
CA5A P35218 1/20 0.32
CA7 P43166 1/20 0.32
CA9 Q16790 1/20 0.32
CA13 Q8N1Q1 1/20 0.32
CA14 Q9ULX7 1/20 0.32
CA5B Q9Y2D0 1/20 0.32
KCNH2 Q12809 1/20 0.32
POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1089266 0.94 KCNH2 (0.32) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL1088603 0.94 KCNH2 (0.32) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL1088656 0.84 AGER (0.36) ALDH1A1CA1CA2CA12CA3
SCHEMBL1087889 0.84 GPR3 (0.34) CA1CA2CA5ACA9
Trifluoromethanesulfonic Acid SCHEMBL926924 0.81 KCNH2 (0.42) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL1088638 0.80 GPR3 (0.35) ALDH1A1CYP3A4CA1CA2CA12
SCHEMBL1088827 0.80 GPR3 (0.35) ALDH1A1CYP3A4CA1CA2CA12
SCHEMBL7711443 0.79 CA2 (0.36) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL7708812 0.79 ALDH1A1 (0.34) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL1089406 0.78 CA2 (0.37) ALDH1A1CYP3A4MAPK1CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-12338309-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-24 US disclosed
US-20240254268-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2024-08-01 US disclosed
US-11945894-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2024-04-02 US disclosed
EP-4176001-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM Electronic Materials U.S.A, Inc. (US) 2023-05-10 EP disclosed
CN-115734982-A Dielectric film-forming composition 富士胶片电子材料美国有限公司 2023-03-03 CN disclosed
EP-4118679-A1 METAL DEPOSITION PROCESSES Fujifilm Electronic Materials U.S.A., Inc. (US) 2023-01-18 EP disclosed
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP disclosed
US-20220002463-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2022-01-06 US disclosed
WO-2022005783-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2022-01-06 WO disclosed
US-6479210-B2 COMPRISING AN ORGANIC MATERIAL CONTAINING SUBSTITUENT(S) CAPABLE OF BEING RELEASED IN THE PRESENCE OF ACID, AND ACID GENERATORS OF AT LEAST ONE ONIUM SALT AND SULFONE AND/OR SULFONATE COMPOUNDS; RESOLUTION, SENSITIVITY CLARIANT FINANCE (BVI) LIMITED (VG) 2002-11-12 US disclosed
US-20010036589-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2001-11-01 US disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
WO-2001022162-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
US-6165682-A Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2000-12-26 US disclosed
US-6146793-A TERPOLYMER WITH CHEMICALLY AMPLIFIED (ACID LABILE) MOIETIES AND ORGANOSILICON MOIETIES SUITABLE FOR USE AS THE BINDER RESIN FOR A PHOTOIMAGEABLE RESIST PHOTORESIST COMPOSITION SUITABLE FOR USE IN 193 NM PHOTOLITHOGRAPHIC PROCESSES. ARCH SPECIALTY CHEMICALS, INC. (US) 2000-11-14 US disclosed
EP-0989459-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
WO-1999042903-A1 RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-08-26 WO disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed