SCHEMBL1088656

SCHEMBL1088656

Cc1ccc([S+](c2ccc(C)cc2)c2ccc(C)cc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AGER Q15109 1/20 0.36
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA5A P35218 2/20 0.34
CA9 Q16790 2/20 0.34
GAA P10253 2/20 0.33
ALDH1A1 P00352 1/20 0.33
KCNH2 Q12809 1/20 0.32
FFAR1 O14842 1/20 0.32
CDK1 P06493 1/20 0.32
CCNB1 P14635 1/20 0.32
CCNA2 P20248 1/20 0.32
CDK2 P24941 1/20 0.32
CDK7 P50613 1/20 0.32
CCNH P51946 1/20 0.32
CCNA1 P78396 1/20 0.32
FFAR4 Q5NUL3 1/20 0.32
GPR3 P46089 1/20 0.32
CA12 O43570 1/20 0.32
CA3 P07451 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1088638 0.94 GPR3 (0.35) AGERCA1CA2CA5ACA9
SCHEMBL1088827 0.94 GPR3 (0.35) AGERCA1CA2CA5ACA9
SCHEMBL1088451 0.84 ALDH1A1 (0.33) CA1CA2CA5ACA9ALDH1A1
SCHEMBL1087889 0.84 GPR3 (0.34) CA1CA2CA5ACA9GPR3
Trifluoromethanesulfonic Acid SCHEMBL36224 0.81 GPR3 (0.44) AGERCA1CA2CA5ACA9
SCHEMBL1593301 0.81 TLR9 (0.36) AGERCA1CA2CA5ACA9
SCHEMBL1089234 0.80 HSD11B1 (0.38) GAAALDH1A1SMN1; SMN2
SCHEMBL1088603 0.80 KCNH2 (0.32) CA1CA2ALDH1A1KCNH2
SCHEMBL1089266 0.80 KCNH2 (0.32) CA1CA2ALDH1A1KCNH2
SCHEMBL271338 0.79 TLR9 (0.35) CA1CA2CA5ACA9GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-11945894-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2024-04-02 US disclosed
EP-4176001-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM Electronic Materials U.S.A, Inc. (US) 2023-05-10 EP disclosed
EP-4118679-A1 METAL DEPOSITION PROCESSES Fujifilm Electronic Materials U.S.A., Inc. (US) 2023-01-18 EP disclosed
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP disclosed
WO-2022005783-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2022-01-06 WO disclosed
US-20220002463-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2022-01-06 US disclosed
WO-2021183472-A1 METAL DEPOSITION PROCESSES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2021-09-16 WO disclosed
US-20210287939-A1 Metal Deposition Processes FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2021-09-16 US disclosed
EP-2387735-B1 NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS FUJIFILM ELECTRONIC MAT USA INC (US) 2019-03-13 EP disclosed
US-20010036589-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2001-11-01 US disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
WO-2001022163-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
WO-2001022162-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
US-6165682-A Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2000-12-26 US disclosed
US-6146793-A TERPOLYMER WITH CHEMICALLY AMPLIFIED (ACID LABILE) MOIETIES AND ORGANOSILICON MOIETIES SUITABLE FOR USE AS THE BINDER RESIN FOR A PHOTOIMAGEABLE RESIST PHOTORESIST COMPOSITION SUITABLE FOR USE IN 193 NM PHOTOLITHOGRAPHIC PROCESSES. ARCH SPECIALTY CHEMICALS, INC. (US) 2000-11-14 US disclosed
EP-0989459-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
WO-1999042903-A1 RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-08-26 WO disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed