Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Salicylic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 8/20 | 0.70 |
| ▸ | HPGD | P15428 | 7/20 | 0.70 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.70 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.52 |
| ▸ | CA12 | O43570 | 1/20 | 0.52 |
| ▸ | CA1 | P00915 | 1/20 | 0.52 |
| ▸ | CA2 | P00918 | 1/20 | 0.52 |
| ▸ | HMGB1 | P09429 | 1/20 | 0.52 |
| ▸ | CA4 | P22748 | 1/20 | 0.52 |
| ▸ | CA6 | P23280 | 1/20 | 0.52 |
| ▸ | CA7 | P43166 | 1/20 | 0.52 |
| ▸ | CA9 | Q16790 | 1/20 | 0.52 |
| ▸ | NAPRT | Q6XQN6 | 1/20 | 0.52 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.52 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.45 |
| ▸ | MAPT | P10636 | 3/20 | 0.45 |
| ▸ | TSHR | P16473 | 3/20 | 0.45 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.44 |
| ▸ | NPC1 | O15118 | 2/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Salicylic Acid SCHEMBL516279 | 0.93 | HPGD (0.61) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Phthalic Acid SCHEMBL107074 | 0.88 | ALDH1A1 (0.50) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL5450889 | 0.86 | KDM4E (0.95) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL6249450 | 0.85 | KDM4E (0.95) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL23795260 | 0.84 | HPGD (0.83) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL31140000 | 0.84 | HPGD (0.83) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL27974441 | 0.84 | HPGD (0.83) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL31140005 | 0.84 | HPGD (0.83) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL10669448 | 0.84 | HPGD (0.83) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 | |
| Salicylic Acid SCHEMBL455422 | 0.83 | KDM4E (1.00) | KDM4EHPGDALDH1A1SMN1; SMN2CA12 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 604 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250377590-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2025-12-11 | — | — | US | claimed |
| US-12422748-B2 | Radiation-sensitive resin composition and method for forming resist pattern | JSR CORPORATION (JP) | 2025-09-23 | — | — | US | claimed |
| US-20230341772-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-10-26 | — | — | US | claimed |
| US-11747725-B2 | Radiation-sensitive resin composition and method for forming resist pattern | JSR CORPORATION (JP) | 2023-09-05 | — | — | US | claimed |
| US-20140363773-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | claimed |
| US-20120156621-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-06-21 | — | — | US | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260079396-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2026-03-19 | — | — | US | disclosed |
| US-20260063994-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2026-03-05 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-12516074-B2 | Composition, film, method of forming film, method of forming pattern, method of forming organic-underlayer-film reverse pattern, and method of producing composition | JSR CORPORATION (JP) | 2026-01-06 | — | — | US | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230341772-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RER1, XRCC5, F12 | KDM4E 2313/4885HPGD 1741/4885ALDH1A1 2075/4885 |
| US-20260079396-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND | SRMS, RAD1, SLC11A2 | KDM4E 2460/4885HPGD 4137/4885ALDH1A1 3009/4885 |
| US-11747725-B2 | Radiation-sensitive resin composition and method for forming resist pattern | RER1, AFF1, RAD51 | KDM4E 3805/4885HPGD 1167/4885ALDH1A1 2008/4885 |
| US-12422748-B2 | Radiation-sensitive resin composition and method for forming resist pattern | RER1, XRCC5, F12 | KDM4E 2301/4885HPGD 1739/4885ALDH1A1 2058/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | KDM4E 588/4885HPGD 4878/4885ALDH1A1 4452/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | KDM4E 2013/4885HPGD 4586/4885ALDH1A1 1558/4885 |
| US-20260063994-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND | RAD1, RPA1, RAD51 | KDM4E 4262/4885HPGD 3920/4885ALDH1A1 274/4885 |
| US-20250377590-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RER1, RAD51, RFC2 | KDM4E 3336/4885HPGD 1341/4885ALDH1A1 625/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.