SCHEMBL2573073

SCHEMBL2573073

CCCCCS(=O)(=O)O.O=C1CC(O)C(=O)N1

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 1/20 0.38
ALDH1A1 P00352 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
EPHX2 P34913 1/20 0.35
PRKCA P17252 1/20 0.32
MAPT P10636 2/20 0.31
LMNA P02545 2/20 0.31
TP53 P04637 1/20 0.31
ALOX15 P16050 1/20 0.31
MAPK1 P28482 1/20 0.31
HSD17B10 Q99714 1/20 0.31
FAAH O00519 2/20 0.31
CRBN Q96SW2 1/20 0.31
S1PR2 O95136 1/20 0.31
S1PR1 P21453 1/20 0.31
S1PR3 Q99500 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL112503 0.98 ALDH1A1 (0.38) NPC1ALDH1A1L3MBTL1EPHX2PRKCA
SCHEMBL17065485 0.89 MEN1 (0.35) NPC1CRBN
SCHEMBL114368 0.85 MAP3K14 (0.38) NPC1ALDH1A1CRBN
SCHEMBL1028532 0.78 MAP3K14 (0.40) L3MBTL1CRBN
Sulfuric Acid SCHEMBL4970729 0.78 MAP3K14 (0.43) L3MBTL1CRBN
Succinimide SCHEMBL219483 0.77 CRBN (0.41) EPHX2PRKCAFAAHCRBNS1PR2
Alcohol SCHEMBL28225153 0.76 MAP3K14 (0.41) NPC1ALDH1A1L3MBTL1MAPTLMNA
Succinimide SCHEMBL218314 0.76 EPHX2 (0.43) EPHX2PRKCALMNAFAAHCRBN
SCHEMBL28192816 0.75 TSHR (0.47) NPC1ALDH1A1L3MBTL1EPHX2
SCHEMBL15494454 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104981463-B Compound, lower layer film for lithography form material, lower layer film for lithography and pattern formation method 三菱瓦斯化学株式会社 2018-04-13 CN disclosed
CN-103733136-B Underlayer film forming material for lithography, underlayer film for lithography, and pattern forming method 三菱瓦斯化学株式会社 2017-06-23 CN disclosed
EP-2384457-A2 COATING COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2011-11-09 EP disclosed
WO-2010055406-A2 COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-05-20 WO disclosed