Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.42 |
| ▸ | TP53 | P04637 | 1/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.36 |
| ▸ | MGLL | Q99685 | 3/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12019797 | 0.89 | ALDH1A1 (0.37) | ALDH1A1TP53CYP3A4MGLL | |
| SCHEMBL10225089 | 0.89 | ALDH1A1 (0.34) | ALDH1A1TP53CYP3A4L3MBTL1 | |
| SCHEMBL12019875 | 0.87 | LMNA (0.41) | ALDH1A1TP53CYP3A4L3MBTL1MGLL | |
| SCHEMBL10225088 | 0.87 | ALDH1A1 (0.36) | ALDH1A1TP53CYP3A4L3MBTL1 | |
| SCHEMBL12019881 | 0.83 | LMNA (0.51) | ALDH1A1LMNA | |
| SCHEMBL2605946 | 0.82 | LMNA (0.47) | ALDH1A1MGLLLMNA | |
| SCHEMBL10225079 | 0.81 | L3MBTL1 (0.34) | ALDH1A1L3MBTL1 | |
| SCHEMBL10941572 | 0.80 | ALDH1A1 (0.48) | ALDH1A1TP53CYP3A4MGLLLMNA | |
| SCHEMBL9612197 | 0.79 | CA2 (0.50) | ALDH1A1 | |
| SCHEMBL14294715 | 0.79 | ALDH1A1 (0.39) | ALDH1A1L3MBTL1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9791776-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-8993210-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8940476-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8940473-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8940476-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8753796-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-06-17 | — | — | US | disclosed |
| US-20130022922-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120264055-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120258401-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-11 | — | — | US | disclosed |
| US-20120219904-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20110200936-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-18 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110200936-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | RER1, AFF1, FRG1 | ALDH1A1 2966/4885TP53 3082/4885CYP3A4 2282/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.