SCHEMBL12066321

SCHEMBL12066321

COC(C)(C)C1CC2CCC1C2

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
SLC6A3 Q01959 2/20 0.32
CYP19A1 P11511 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10593634 0.83 SLC6A3 (0.35) SLC6A3CYP19A1
SCHEMBL5917718 0.78 EPHX2 (0.36)
SCHEMBL5917716 0.78
SCHEMBL13641583 0.78 CYP19A1 (0.31) CYP19A1
SCHEMBL19865846 0.77 CYP19A1 (0.33) CYP19A1
SCHEMBL13293834 0.76 TDP1 (0.33)
SCHEMBL18698659 0.76 TDP1 (0.33)
SCHEMBL5196580 0.76
SCHEMBL3674828 0.75 SLC6A3 (0.34) SLC6A3CYP19A1
SCHEMBL6861923 0.74 SLC6A3 (0.34) SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2539769-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-07 EP disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9551935-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9519214-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, pattern forming method, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-12-13 US disclosed
US-9470980-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2016-10-18 US disclosed
US-20160291461-A1 PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD FUJIFILM CORPORATION (JP) 2016-10-06 US disclosed
US-20130017377-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed
US-20130011785-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 US disclosed
WO-2011149035-A1 PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-01 WO disclosed
US-20110195362-A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-11 US disclosed
US-20110195362-A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-11 US disclosed
US-7666571-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-23 US disclosed
US-7666571-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-23 US disclosed
US-20070099114-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099114-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110195362-A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE PARG, TOP2A, FRG1 SLC6A3 1822/4885CYP19A1 1216/4885
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM RAD51, RER1, RXRA SLC6A3 2618/4885CYP19A1 3169/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.