Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.36 |
| ▸ | CES2 | O00748 | 3/20 | 0.36 |
| ▸ | CES1 | P23141 | 2/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | FAAH | O00519 | 4/20 | 0.31 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
| ▸ | HTT | P42858 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5827906 | 0.87 | EPHX1 (0.35) | CES2CES1FAAHEPHX1MEN1 | |
| SCHEMBL18007987 | 0.85 | EPHX1 (0.34) | CES2CES1FAAHEPHX1 | |
| SCHEMBL18008760 | 0.85 | EPHX1 (0.34) | CES2CES1FAAHEPHX1 | |
| SCHEMBL18008236 | 0.85 | CES2 (0.39) | CES2CES1FAAHEPHX1MEN1 | |
| SCHEMBL18008773 | 0.85 | EPHX1 (0.34) | CES2CES1FAAHEPHX1 | |
| SCHEMBL18008171 | 0.85 | EPHX1 (0.34) | CES2CES1FAAHEPHX1 | |
| SCHEMBL15701003 | 0.83 | CES2 (0.42) | CES2CES1FAAHEPHX1MEN1 | |
| SCHEMBL18008466 | 0.83 | CES2 (0.42) | CES2CES1FAAHEPHX1MEN1 | |
| Ammonia Solution, Strong SCHEMBL18008759 | 0.83 | EPHX1 (0.33) | CES2CES1FAAHEPHX1 | |
| SCHEMBL18009133 | 0.83 | CES2 (0.42) | CES2CES1FAAHEPHX1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9023579-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9023579-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| EP-2353048-B1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORP (JP) | 2015-02-25 | — | — | EP | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-02-03 | — | — | US | disclosed |
| US-20100190106-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100190106-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| WO-2010061977-A2 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | WO | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | RER1, RARA, RARG | TSHR 2489/4885CES2 2232/4885CES1 2733/4885 |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | RER1, RXRA, XRN2 | TSHR 1934/4885CES2 2767/4885CES1 2138/4885 |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | RER1, RXRA, XRN2 | TSHR 1934/4885CES2 2767/4885CES1 2138/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.