Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 6/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.40 |
| ▸ | HPGD | P15428 | 5/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.40 |
| ▸ | GLA | P06280 | 3/20 | 0.40 |
| ▸ | MEN1 | O00255 | 3/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | ATM | Q13315 | 2/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | GPR84 | Q9NQS5 | 1/20 | 0.38 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.38 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.37 |
| ▸ | ERN1 | O75460 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28301504 | 0.89 | L3MBTL1 (0.40) | KDM4EALDH1A1KMT2AHSD17B10L3MBTL1 | |
| SCHEMBL8738223 | 0.87 | LCK (0.37) | KDM4EALDH1A1KMT2AGLAMEN1 | |
| SCHEMBL18671921 | 0.83 | KDM4E (0.39) | KDM4EALDH1A1HPGDKMT2AGLA | |
| SCHEMBL12419181 | 0.83 | L3MBTL1 (0.37) | KDM4EALDH1A1HPGDKMT2AHSD17B10 | |
| SCHEMBL8738725 | 0.83 | ALDH1A1 (0.39) | KDM4EALDH1A1HPGDKMT2AHSD17B10 | |
| SCHEMBL12084564 | 0.81 | EPHX1 (0.49) | KDM4EALDH1A1HPGDKMT2AGLA | |
| SCHEMBL12419186 | 0.81 | LMNA (0.37) | KDM4EALDH1A1KMT2AMEN1CYP1A2 | |
| SCHEMBL12419182 | 0.81 | HSD17B10 (0.38) | KDM4EALDH1A1KMT2ACYP1A2CYP2C19 | |
| SCHEMBL6511350 | 0.81 | ALDH1A1 (0.42) | KDM4EALDH1A1HPGDKMT2AGLA | |
| SCHEMBL12419164 | 0.81 | ALDH1A1 (0.40) | KDM4EALDH1A1HPGDKMT2AGLA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110256655-A | A kind of tannic acid Quito official's epoxy resin and preparation method thereof and preparation can liquid alkali developing negative photoresist | 苏州瑞红电子化学品有限公司 | 2019-09-20 | — | — | CN | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-31 | — | — | US | disclosed |
| US-20150268556-A1 | CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-24 | — | — | US | disclosed |
| US-20150253662-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-8377625-B2 | Method for producing a copolymer solution with a uniform concentration for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2013-02-19 | — | — | US | disclosed |
| US-20110171579-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-7960494-B2 | Copolymer for semiconductor lithography and process for producing the same | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-20100143842-A1 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20090306328-A1 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2009-12-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | KDM4E 3446/4885ALDH1A1 3949/4885HPGD 4873/4885 |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | ETV6, ETV1, EIF2B3 | KDM4E 591/4885ALDH1A1 3354/4885HPGD 4446/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.