SCHEMBL12453267

SCHEMBL12453267

CCOC(C)OC(=O)CCC(C)C1CCC2C3CCC4CC(O)CCC4(C)C3CC(O)C12C

nearest known ligand 0.77

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 2/20 0.77
▸ MEN1 O00255 2/20 0.77
▸ KMT2A Q03164 2/20 0.77
▸ USP2 O75604 2/20 0.77
▸ MAPK1 P28482 2/20 0.77
▸ LMNA P02545 1/20 0.77
▸ GPBAR1 Q8TDU6 10/20 0.73
▸ SLC10A2 Q12908 2/20 0.73
▸ TBXA2R P21731 1/20 0.73
▸ PDE3A Q14432 1/20 0.73
▸ NR1H4 Q96RI1 1/20 0.73
▸ ABCC4 O15439 1/20 0.62
▸ CA1 P00915 3/20 0.61
▸ CA2 P00918 3/20 0.61
▸ CYP2C9 P11712 1/20 0.61
▸ HIF1A Q16665 1/20 0.61
▸ VDR P11473 1/20 0.61
▸ CYP3A4 P08684 2/20 0.59
▸ SLCO1B3 Q9NPD5 1/20 0.59
▸ SLCO1B1 Q9Y6L6 1/20 0.59

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15579834 0.92 MAPT (0.66) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL21283699 0.90 MAPT (0.84) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL21283703 0.90 MAPT (0.84) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL27352190 0.90 MAPT (0.84) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL5437613 0.90 MAPT (0.80) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL27352374 0.90 MAPT (0.80) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL22699678 0.89 MAPT (0.83) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL2618668 0.89 GPBAR1 (0.76) MAPTUSP2MAPK1LMNAGPBAR1
SCHEMBL12019714 0.89 GPBAR1 (0.76) MAPTUSP2MAPK1LMNAGPBAR1
SCHEMBL4971166 0.89 MAPT (0.83) MAPTMEN1KMT2AUSP2MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210109446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND RESIN FUJIFILM CORPORATION (JP) 2021-04-15 — — US disclosed
US-9316908-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-19 — — US disclosed
US-9316908-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-19 — — US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 — — US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 — — US disclosed
US-8993211-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-03-31 — — US disclosed
US-8993211-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-03-31 — — US disclosed
US-20140370425-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-12-18 — — US disclosed
US-20140370425-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-12-18 — — US disclosed
US-8900789-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2014-12-02 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130020684-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-24 — — US disclosed
US-20130020684-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-24 — — US disclosed
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition FUJIFILM CORPORATION (JP) 2012-09-20 — — US disclosed
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition FUJIFILM CORPORATION (JP) 2012-09-20 — — US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 — — US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 — — US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 — — US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION ZYX, CD79B, TERB1 MAPT 2285/4885MEN1 2145/4885KMT2A 1636/4885
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition RER1, RXRA, XRN2 MAPT 959/4885MEN1 2938/4885KMT2A 2895/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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