SCHEMBL1270907

SCHEMBL1270907

CC(CSCC(O)CO)CS(=O)(=O)O.[NaH]

nearest known ligand 0.30

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA4 P22748 1/20 0.30
CA7 P43166 1/20 0.30
CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5835317 0.98 CA1 (0.31) CA1CA2CA4CA7CA9
SCHEMBL1270905 0.81 CA1 (0.32) CA1CA2CA4CA7CA9
SCHEMBL31697972 0.72 ALDH1A1 (0.35)
SCHEMBL14295114 0.72 ALDH1A1 (0.35)
SCHEMBL6113148 0.71 LMNA (0.42)
SCHEMBL10993958 0.71
SCHEMBL27658493 0.71 SLC22A6 (0.42) CA1CA2CA9
SCHEMBL890790 0.71 LMNA (0.53)
SCHEMBL9013820 0.69 TDP1 (0.45) CA1CA2CA4CA7CA9
SCHEMBL743651 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12588450-B2 Post-CMP cleaning liquid comprising a substituted benzene anticorrosive agent, chelant, and amine compound FUJIFILM CORPORATION (JP) 2026-03-24 US disclosed
US-12480072-B2 Cleaning fluid and cleaning method FUJIFILM CORPORATION (JP) 2025-11-25 US disclosed
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-09-04 US disclosed
US-12374540-B2 Post-CMP semiconductor cleaning composition comprising an amine/alkanolamine mixture FUJIFILM CORPORATION (JP) 2025-07-29 US disclosed
US-12264275-B2 Treatment liquid FUJIFILM CORPORATION (JP) 2025-04-01 US disclosed
US-12247300-B2 Cleaning solution and cleaning method FUJIFILM CORPORATION (JP) 2025-03-11 US disclosed
US-20250019836-A1 TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2025-01-16 US disclosed
US-20250019623-A1 CLEANING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FUJIFILM CORPORATION (JP) 2025-01-16 US disclosed
US-12187984-B2 Treatment liquid and method for treating object to be treated FUJIFILM CORPORATION (JP) 2025-01-07 US disclosed
US-12164229-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-12-10 US disclosed
EP-2202579-A2 Chemically amplified photoresist composition, photoresist laminated product, manufacturing method for photoresist composition, manufacturing method for photoresist pattern, and manufacturing method for connection element Tokyo Ohka Kogyo Co., Ltd. (JP) 2010-06-30 EP disclosed
US-20100112495-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2010-05-06 US disclosed
US-20080241758-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2008-10-02 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
US-20070243494-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2007-10-18 US disclosed
EP-1818722-A1 CHEMICAL AMPLIFICATION PHOTORESIST COMPOSITION, PHOTORESIST LAYER LAMINATE, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST PATTERN AND METHOD FOR PRODUCING CONNECTING TERMINAL TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-15 EP disclosed
US-20070003859-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2007-01-04 US disclosed
US-20060035176-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU 2006-02-16 US disclosed
US-20050106492-A1 Photoresist stripping solution and a method of stripping photoresists using the same YOKOI SHIGERU (JP) 2005-05-19 US disclosed
US-20030099908-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-05-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12164229-B2 Resist composition and method for producing resist pattern HACL2, ACAD10, HSD17B10 CA1 3854/4885CA2 3794/4885CA4 2709/4885
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ABCC1, SLC11A2, RER1 CA1 4470/4885CA2 4680/4885CA4 3520/4885
US-12588450-B2 Post-CMP cleaning liquid comprising a substituted benzene anticorrosive agent, chelant, and amine compound SSRP1, H1-5, AOC1 CA1 446/4885CA2 1217/4885CA4 1542/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.