SCHEMBL13027238

SCHEMBL13027238

COc1ccc(C)c(C[Si](OC)(OC)OC)c1C

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TSHR P16473 3/20 0.33
▸ MEN1 O00255 3/20 0.33
▸ KMT2A Q03164 3/20 0.33
▸ ALDH1A1 P00352 2/20 0.33
▸ KDM4E B2RXH2 2/20 0.33
▸ HPGD P15428 2/20 0.33
▸ HSD17B10 Q99714 2/20 0.33
▸ L3MBTL1 Q9Y468 1/20 0.33
▸ MAPT P10636 2/20 0.33
▸ ACHE P22303 1/20 0.32
▸ SLC6A4 P31645 1/20 0.31
▸ POLB P06746 1/20 0.31
▸ GAA P10253 1/20 0.31
▸ PKM P14618 1/20 0.31
▸ CA2 P00918 1/20 0.31
▸ NR3C1 P04150 1/20 0.30
▸ NR3C2 P08235 1/20 0.30
▸ CYP19A1 P11511 1/20 0.30
▸ TUBB1 Q9H4B7 3/20 0.30
▸ NQO2 P16083 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027260 0.89 ACHE (0.34) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027242 0.85 MAPT (0.33) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027314 0.84 TSHR (0.31) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027225 0.84 CYP1A2 (0.31) TSHR
SCHEMBL13027405 0.84 ALDH1A1 (0.32) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027257 0.80 ALDH1A1 (0.34) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027251 0.78 CA12 (0.38) ALDH1A1KDM4EHPGDHSD17B10MAPT
SCHEMBL13027245 0.77 ADRA2A (0.31) —
SCHEMBL15672394 0.76 KMT2A (0.33) TSHRMEN1KMT2AALDH1A1KDM4E
SCHEMBL13027264 0.76 MEN1 (0.47) TSHRMEN1KMT2AALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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