SCHEMBL13027405

SCHEMBL13027405

COc1ccc(C)c(CC[Si](OC)(OC)OC)c1C

nearest known ligand 0.32

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 5/20 0.32
▸ CYP3A4 P08684 1/20 0.32
▸ KDM4E B2RXH2 4/20 0.32
▸ MEN1 O00255 3/20 0.32
▸ KMT2A Q03164 3/20 0.32
▸ TSHR P16473 2/20 0.32
▸ HPGD P15428 1/20 0.32
▸ HSD17B10 Q99714 1/20 0.32
▸ L3MBTL1 Q9Y468 1/20 0.32
▸ MAPT P10636 4/20 0.32
▸ CYP19A1 P11511 1/20 0.32
▸ ACHE P22303 1/20 0.31
▸ POLB P06746 2/20 0.31
▸ NPSR1 Q6W5P4 1/20 0.31
▸ GAA P10253 2/20 0.31
▸ SLC6A4 P31645 1/20 0.30
▸ ATM Q13315 1/20 0.30
▸ RAD52 P43351 1/20 0.30
▸ PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15672394 0.89 KMT2A (0.33) ALDH1A1KDM4EMEN1KMT2ATSHR
SCHEMBL13027381 0.87 NOS2 (0.32) POLB
SCHEMBL15672398 0.87 KDM4E (0.32) KDM4EMAPTGAARAD52
SCHEMBL13027426 0.86 KDM4E (0.32) ALDH1A1KDM4EMEN1KMT2AMAPT
SCHEMBL13027532 0.84 — —
SCHEMBL13027238 0.84 TSHR (0.33) ALDH1A1KDM4EMEN1KMT2ATSHR
SCHEMBL15672392 0.81 ALDH1A1 (0.33) ALDH1A1KDM4EMEN1KMT2ATSHR
SCHEMBL15672396 0.80 MEN1 (0.46) ALDH1A1KDM4EMEN1KMT2ATSHR
SCHEMBL13027428 0.79 CA12 (0.37) ALDH1A1CYP3A4KDM4EHPGDHSD17B10
SCHEMBL13027413 0.78 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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