SCHEMBL13079563

SCHEMBL13079563

O=C(O)C1CCCCC1C(=O)OC(CS(=O)(=O)O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.43

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
PEPD P12955 1/20 0.32
TAAR1 Q96RJ0 2/20 0.31
TP53 P04637 1/20 0.30
CYP3A4 P08684 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20013706 0.87 EPHX1 (0.33)
SCHEMBL21504751 0.85 CHRM2 (0.33)
SCHEMBL16020232 0.83 PEPD (0.30) PEPDTAAR1
SCHEMBL13079561 0.82 SMN1; SMN2 (0.31) SMN1; SMN2
SCHEMBL13079562 0.81 HDAC8 (0.32) SMN1; SMN2
SCHEMBL19961456 0.81 HDAC8 (0.32) SMN1; SMN2
SCHEMBL19961458 0.81 HDAC8 (0.32) SMN1; SMN2
SCHEMBL19961457 0.81 HDAC8 (0.32) SMN1; SMN2
SCHEMBL19961459 0.81 HDAC8 (0.32) SMN1; SMN2
SCHEMBL19961449 0.81 HDAC8 (0.32) SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 US disclosed
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 US disclosed
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-07 US disclosed
US-11693314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-29 US disclosed
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-29 US disclosed
US-11579526-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-14 US disclosed
US-20220236643-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-28 US disclosed
US-11340527-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-24 US disclosed
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-28 US disclosed
US-20180088464-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20170184967-A1 RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-9519213-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-13 US disclosed
US-9122155-B2 Sulfonium salt, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-01 US disclosed
US-9122155-B2 Sulfonium salt, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-01 US disclosed
US-8956803-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-8956803-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-20140255843-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-11 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SLC6A9, SLC6A5, REN PEPD 2212/4885TAAR1 2532/4885TP53 4795/4885
US-20180088464-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS LSM14A, PAG1, EWSR1 PEPD 3533/4885TAAR1 2401/4885TP53 2629/4885
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS CACNA1F, SLC6A5, IDUA PEPD 2663/4885TAAR1 3743/4885TP53 4265/4885
US-11340527-B2 Resist composition and patterning process EIF2B1, EIF2B5, WDR1 PEPD 4449/4885TAAR1 3359/4885TP53 3533/4885
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process IDUA, SLC6A5, SLC6A9 PEPD 2209/4885TAAR1 2492/4885TP53 4838/4885
US-20170184967-A1 RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER EEF1D, EEF1G, RPL14 PEPD 3867/4885TAAR1 4844/4885TP53 2164/4885
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME DAP3, MRPS23, ASIC3 PEPD 4641/4885TAAR1 2262/4885TP53 3589/4885
US-20230280651-A1 RESIST COMPOSITION AND PATTERNING PROCESS EIF2B1, EIF2B5, EIF2B3 PEPD 4270/4885TAAR1 3688/4885TP53 3464/4885
US-11693314-B2 Resist composition and patterning process EIF2B1, EIF2B5, EIF2B3 PEPD 4270/4885TAAR1 3688/4885TP53 3464/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.