SCHEMBL13326151

SCHEMBL13326151

Cc1ccc(-[s+]2c3ccccc3c(=O)c(=O)c3ccccc32)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
P2RX4 Q99571 1/20 0.38
ALOX12 P18054 3/20 0.37
LMNA P02545 2/20 0.37
TSHR P16473 2/20 0.37
ACHE P22303 1/20 0.37
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
NPC1 O15118 5/20 0.36
POLB P06746 1/20 0.36
RAB9A P51151 5/20 0.36
TNKS O95271 2/20 0.36
PARP1 P09874 2/20 0.36
TNKS2 Q9H2K2 2/20 0.36
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
HTT P42858 2/20 0.35
NPSR1 Q6W5P4 2/20 0.35
TP53 P04637 2/20 0.35
XBP1 P17861 1/20 0.35
ATM Q13315 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13326072 0.96 P2RX4 (0.41) P2RX4ALOX12LMNATSHRACHE
SCHEMBL29968036 0.88 ACHE (0.38) ALOX12LMNATSHRACHEMEN1
Iodide SCHEMBL3776654 0.86 ACHE (0.36) ALOX12LMNATSHRACHEMEN1
SCHEMBL13326153 0.86 ALDH1A1 (0.39) P2RX4ALOX12LMNAMEN1KMT2A
SCHEMBL3142984 0.81 ALDH1A1 (0.39) P2RX4ALOX12LMNAMEN1KMT2A
Acetic Acid SCHEMBL3771068 0.80 LMNA (0.37) LMNATSHRMEN1KMT2ANPC1
SCHEMBL13326071 0.80 CA1 (0.39) LMNATSHRMEN1KMT2ANPC1
SCHEMBL13326090 0.79 CTSV (0.43) TSHRACHEMEN1KMT2APARP1
SCHEMBL13088309 0.77 KDM4E (0.40) LMNANPC1RAB9ATNKSPARP1
SCHEMBL13088245 0.77 MAOA (0.40) MEN1KMT2APOLBTNKSPARP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-7615330-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7541131-B2 Resist composition, compound for use in the resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-06-02 US disclosed
US-7374860-B2 Positive resist composition and pattern forming method using the same FUJI FILM CORPORATION (JP) 2008-05-20 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20070224540-A1 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed