Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1598462 | 0.97 | — | — | |
| Water SCHEMBL27488837 | 0.94 | — | — | |
| Bromide SCHEMBL3718607 | 0.94 | — | — | |
| Hydrochloric Acid SCHEMBL17710451 | 0.94 | — | — | |
| Fluoride Ion SCHEMBL20213752 | 0.94 | — | — | |
| SCHEMBL6844418 | 0.86 | DNM1 (0.44) | — | |
| Water SCHEMBL1040437 | 0.83 | DNM1 (0.57) | — | |
| Water SCHEMBL3302085 | 0.82 | DNM1 (0.52) | — | |
| Acetic Acid SCHEMBL2761970 | 0.82 | BBOX1 (0.54) | — | |
| SCHEMBL16700961 | 0.82 | BBOX1 (0.43) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113430064-A | Hydroxylamine-free water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113430069-A | Low-hydroxylamine water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113430070-A | CoWP-compatible semi-aqueous cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| US-8859437-B2 | Solution for etching a thin film transistor and method of manufacturing the same | THE PENN STATE RESEARCH FOUNDATION (US) | 2014-10-14 | — | — | US | claimed |
| US-20140193945-A1 | SOLUTION FOR ETCHING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | THE PENN STATE RESEARCH FOUNDATION | 2014-07-10 | — | — | US | claimed |
| EP-2122418-B1 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA (US) | 2012-08-08 | — | — | EP | claimed |
| US-20120187336-A1 | CONDITIONING COMPOSITIONS FOR SOLAR CELLS | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2012-07-26 | — | — | US | claimed |
| US-8026201-B2 | Comprising: a fluoride source, an organic quaternary ammonium base, and a solvent selected from an organic solvent, water, and mixtures thereof; for removing silicon-based anti-reflective coatings/hardmask layers from microelectronics; etch selectivity | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2011-09-27 | — | — | US | claimed |
| EP-2122418-A2 | STRIPPER FOR COATING LAYER | AZ Electronic Materials USA Corp. (US) | 2009-11-25 | — | — | EP | claimed |
| US-20090120457-A1 | COMPOSITIONS AND METHOD FOR REMOVING COATINGS AND PREPARATION OF SURFACES FOR USE IN METAL FINISHING, AND MANUFACTURING OF ELECTRONIC AND MICROELECTRONIC DEVICES | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2009-05-14 | — | — | US | claimed |
| WO-2008081416-A2 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2008-07-10 | — | — | WO | claimed |
| US-20080161217-A1 | Stripper for Coating Layer | MERCK PATENT GMBH (DE) | 2008-07-03 | — | — | US | claimed |
| EP-1027415-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | Kyzen Corporation (US) | 2000-08-16 | — | — | EP | claimed |
| WO-1999016855-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | KYZEN CORPORATION (US) | 1999-04-08 | — | — | WO | claimed |
| US-4339340-A | HYDROXYLAKYL/TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1982-07-13 | — | — | US | claimed |
| US-4239661-A | HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1980-12-16 | — | — | US | claimed |
| CN-113430070-B | CoWP compatible semi-water-based cleaning solution, preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| CN-113430069-B | Low-hydroxylamine water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| US-4239661-A | HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1980-12-16 | — | — | US | disclosed |
| US-4172005-A | Method of etching a semiconductor substrate | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1979-10-23 | — | — | US | disclosed |