SCHEMBL13347349

SCHEMBL13347349

C=C(C)C(=O)OC1(c2ccccc2)CCCC1

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
AKR1C1 Q04828 1/20 0.43
ELANE P08246 1/20 0.43
HDAC4 P56524 2/20 0.39
OPRM1 P35372 4/20 0.38
OPRL1 P41146 1/20 0.38
OPRD1 P41143 3/20 0.38
OPRK1 P41145 3/20 0.38
APOBEC3A P31941 2/20 0.37
APOBEC3G Q9HC16 2/20 0.37
DRD3 P35462 2/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
PRCP P42785 1/20 0.36
SIGMAR1 Q99720 1/20 0.36
ALDH1A1 P00352 1/20 0.35
POLB P06746 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1130178 0.98 AKR1C1 (0.42) AKR1C1ELANEHDAC4OPRM1OPRL1
SCHEMBL24944261 0.86 OPRM1 (0.46) ELANEOPRM1OPRL1OPRD1OPRK1
SCHEMBL10311814 0.86 ALDH1A1 (0.43) ELANEOPRM1OPRD1OPRK1L3MBTL1
SCHEMBL10062522 0.86 CA1 (0.38) ELANEOPRM1DRD3L3MBTL1KMT2A
SCHEMBL25698983 0.86 ESR2 (0.42) ELANEMEN1KMT2AALDH1A1
SCHEMBL25699046 0.84 OPRM1 (0.41) AKR1C1ELANEOPRM1OPRD1OPRK1
SCHEMBL25960355 0.84 OPRM1 (0.35) ELANEOPRM1KMT2ASIGMAR1
SCHEMBL23747230 0.84 CYP19A1 (0.40) ELANEMEN1KMT2AALDH1A1
SCHEMBL25564653 0.84 HSD11B1 (0.41) OPRM1DRD3ALDH1A1
SCHEMBL10062521 0.84 CA1 (0.38) ELANEOPRM1DRD3L3MBTL1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
WO-2024150553-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND JSR株式会社 2024-07-18 WO disclosed
US-20240241440-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
WO-2024142681-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-07-04 WO disclosed
WO-2024127808-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-06-20 WO disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20160357111-A1 COMPOSITIONS AND METHODS FOR PATTERN TREATMENT DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160357111-A1 COMPOSITIONS AND METHODS FOR PATTERN TREATMENT DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160357109-A1 PATTERN TREATMENT METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160357109-A1 PATTERN TREATMENT METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160209745-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2016-07-21 US disclosed
US-20160209745-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2016-07-21 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
US-20100129738-A1 POSITIVE RESIST COMPOSITION AND PATTERING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-27 US disclosed
US-20100129738-A1 POSITIVE RESIST COMPOSITION AND PATTERING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME CRY1, CCNT1, CCNA1 AKR1C1 425/4885ELANE 1993/4885HDAC4 2804/4885
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS C1S, C1R, CRY2 AKR1C1 1297/4885ELANE 1902/4885HDAC4 4428/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.