SCHEMBL135696

SCHEMBL135696

CCCC[C](C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.44

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.44
EPHX2 P34913 5/20 0.43
HSD11B1 P28845 1/20 0.36
LMNA P02545 1/20 0.35
FAAH O00519 1/20 0.35
KDM4E B2RXH2 1/20 0.34
HTT P42858 1/20 0.34
ALDH1A1 P00352 2/20 0.34
MAPT P10636 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
CNR1 P21554 2/20 0.34
CNR2 P34972 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL136082 0.87 EPHX2 (0.38) KMT2AEPHX2HSD11B1LMNAKDM4E
SCHEMBL133166 0.78 HSD11B1 (0.40) KMT2AHSD11B1LMNAALDH1A1MAPT
SCHEMBL5406329 0.73 EPHX2 (0.59) KMT2AEPHX2HSD11B1LMNAFAAH
SCHEMBL5678990 0.72 EPHX2 (0.62) KMT2AEPHX2LMNAFAAHALDH1A1
SCHEMBL3854141 0.72 EPHX2 (0.62) KMT2AEPHX2LMNAFAAHALDH1A1
SCHEMBL28292841 0.72 KMT2A (0.49) KMT2AEPHX2LMNAFAAHKDM4E
SCHEMBL3945722 0.71 EPHX2 (0.39) KMT2AEPHX2HSD11B1LMNAKDM4E
SCHEMBL5116668 0.70 KMT2A (0.65) KMT2AEPHX2LMNAFAAHKDM4E
SCHEMBL1075076 0.70 ALDH1A1 (0.49) KMT2AEPHX2HSD11B1LMNAKDM4E
SCHEMBL6220083 0.69 KMT2A (0.43) KMT2AEPHX2HSD11B1LMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
US-9834696-B2 Undercoat agent and method of forming pattern of layer containing block copolymer TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-05 US disclosed
US-9821338-B2 Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA TOKYO OHKA KOGYO., LTD. (JP) 2017-11-21 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9580402-B2 Salt, acid generator, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-02-28 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9494866-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
US-20090186300-A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-20090181325-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-16 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090162787-A1 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
EP-2073060-A1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-24 EP disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
EP-2060600-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-20 EP disclosed
US-20090104563-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-23 US disclosed
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 KMT2A 4210/4885EPHX2 176/4885HSD11B1 1796/4885
US-20090162787-A1 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, ABCC1 KMT2A 2226/4885EPHX2 1032/4885HSD11B1 1775/4885
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR RER1, C1R, ABCC1 KMT2A 3027/4885EPHX2 1580/4885HSD11B1 186/4885
US-20090104563-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, GLRA1 KMT2A 3248/4885EPHX2 1339/4885HSD11B1 552/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 KMT2A 2436/4885EPHX2 2725/4885HSD11B1 1206/4885
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, GLRA1 KMT2A 2645/4885EPHX2 252/4885HSD11B1 1538/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.